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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 12A TO-220FP
- Series：M
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：12:00 AM
- Current - Collector Pulsed (Icm)：24 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 6A
- Power - Max：24.2 W
- Switching Energy：36µJ (on), 200µJ (off)
- Input Type：Standard
- Gate Charge：21.2 nC
- Td (on/off) @ 25°C：15ns/90ns
- Test Condition：400V, 6A, 22Ohm, 15V
- Reverse Recovery Time (trr)：140 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：TO-220FP
- Grade：-
- Qualification：-
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Overview
The STGF6M65DF2 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the M series, manufactured by STMicroelectronics. It utilizes a trench gate field-stop structure and is housed in a TO-220FP-3 through-hole package. The device features a maximum collector-emitter voltage of 650 V and a continuous collector current of 12 A at 25°C. Typical saturation voltage is 1.55 V, with a maximum junction temperature of 175°C and power dissipation rated at 88 W.
Feature Summary
- Trench gate field-stop technology for low conduction losses
- Positive VCE(sat) temperature coefficient for safe paralleling
- Soft and fast-recovery antiparallel diode
- High short-circuit withstand capability
Applications
- Motor control systems
- Uninterruptible Power Supplies (UPS)
- Power Factor Correction (PFC) circuits
- General purpose inverters
Procurement Notes
Verify the specific suffix against official datasheets to confirm pinout and thermal characteristics. Ensure the ordering code matches the exact package variant required for your PCB footprint. Cross-reference the manufacturer's latest revision history for any changes in electrical parameters or recommended operating conditions before finalizing procurement.
Selection Notes
Select this component for applications requiring robust short-circuit protection and efficient switching at 650 V. The TO-220FP-3 package facilitates effective heat sinking for moderate power levels. Consider the positive temperature coefficient for parallel operation needs. Verify that the 12 A continuous current rating aligns with the peak load requirements of the target circuit design.
Part Context
This IGBT belongs to the M series, designed to balance inverter system performance and efficiency. The series emphasizes low-loss operation and essential short-circuit functionality. It represents an evolution in trench gate field-stop technology, offering improved reliability and tighter parameter distribution compared to earlier generations.
Replacement Considerations
Direct replacements include STGD6M65DF2 and STGW30M65DF2 within the same M series family. Verify package compatibility and current ratings when substituting. Ensure the alternative part maintains the required 650 V blocking voltage and similar saturation characteristics for equivalent circuit performance.
