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The STGHU30M65DF2AG is an automotive-grade trench gate field-stop IGBT from the M series, packaged in HU3PAK. It features a collector-emitter voltage of 650 V and a continuous collector current of 84 A at 25 °C case temperature. The typical saturation voltage is 1.6 V at 30 A. Key electrical parameters include a maximum junction temperature of 175 °C, a minimum short-circuit withstand time of 6 μs, and a thermal resistance (junction-to-case) of 0.34 °C/W for the IGBT. The device includes a soft and fast-recovery antiparallel diode with a forward voltage of 1.86 V at 30 A.
Verify the specific ordering code STGHU30M65DF2AG against the latest manufacturer datasheet DS14705 to confirm current production status and environmental compliance grades. Ensure that the HU3PAK package dimensions and tape-and-reel specifications match your assembly equipment requirements before finalizing procurement orders.
Select this component for applications requiring high short-circuit robustness and low conduction losses. The positive temperature coefficient of VCE(sat) facilitates safe parallel operation without complex current balancing circuits. Consider the 175 °C maximum junction temperature capability for high-temperature environments and verify that the 6 μs short-circuit withstand time meets the protection scheme timing of the target system.
This device belongs to the M series of trench gate field-stop IGBTs designed for optimal balance between inverter system performance and efficiency. It is specifically engineered for automotive and industrial applications where low-loss operation and short-circuit functionality are essential. The HU3PAK package provides low thermal resistance and electrical isolation suitable for surface-mount assembly.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing designs by comparing absolute maximum ratings, thermal characteristics, and package dimensions with alternative components.