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Product Detailed Parameters
- Description：IGBT 600V 40A TO-220
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：80 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 12A
- Power - Max：130 W
- Switching Energy：135µJ (on), 815µJ (off)
- Input Type：Standard
- Gate Charge：54.5 nC
- Td (on/off) @ 25°C：17.5ns/175ns
- Test Condition：480V, 12A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
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Overview
The STGP19NC60S is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics, utilizing the PowerMESH™ technology. It features an integrated ultra-fast freewheeling diode and is housed in a TO-220 package. The device supports a collector-emitter voltage of 600 V and a continuous collector current of 20 A at 25 °C. Key electrical parameters include a maximum gate-emitter voltage of ±20 V, a total power dissipation of 130 W at 25 °C case temperature, and a junction temperature range from -55 °C to +150 °C.
Feature Summary
- Advanced PowerMESH™ process for optimized trade-off between switching performance and low on-state behavior
- Integrated ultra-fast freewheeling diode with very soft recovery characteristics
- Low on-voltage drop (VCE(sat)) resulting in minimum power losses at 5 kHz in hard switching applications
Applications
- High frequency motor controls
- Switched-mode power supplies (SMPS)
- Power factor correction (PFC) circuits in both hard switch and resonant topologies
Procurement Notes
Verify the specific suffix 'S' against official STMicroelectronics documentation to confirm it denotes the standard version rather than a variant like 'SD'. Ensure the component matches the required TO-220 package and lead-free specifications. Cross-reference the datasheet revision date to confirm the technical parameters align with current manufacturing standards before finalizing procurement.
Selection Notes
Select this component for medium operating frequencies where low on-state voltage drop is critical. The integrated ultra-fast diode simplifies circuit design for hard-switching applications. Verify that the thermal resistance values provided in the datasheet are sufficient for the intended heat sink configuration to maintain junction temperatures within the specified limits during operation.
Part Context
This IGBT belongs to the STGP series, which utilizes PowerMESH™ technology. The 'G' indicates a general-purpose or specific family classification within ST's discrete semiconductor portfolio. It is designed as a single unit with a built-in diode, distinct from dual configurations found in other modules. The part is actively supported by STMicroelectronics for industrial and consumer power electronics.
Replacement Considerations
Direct substitutes may include STGP19NC60HD or STGP19NC60SD if pin compatibility and electrical ratings match. Verify that alternative parts offer equivalent switching speeds and reverse recovery times for the ultra-fast diode to ensure circuit stability without redesign.
