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Product Detailed Parameters
- Description：IGBT TRENCH FS 600V 60A TO-220
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 30A
- Power - Max：258 W
- Switching Energy：383µJ (on), 233µJ (off)
- Input Type：Standard
- Gate Charge：163 nC
- Td (on/off) @ 25°C：45ns/189ns
- Test Condition：400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr)：53 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
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Overview
The STGP30V60DF is a Trench gate field-stop IGBT from the V series, rated at 600 V and 30 A. It features tail-less switching off with a typical VCE(sat) of 1.85 V at IC = 30 A. The device supports a maximum junction temperature of 175 °C and offers tight parameter distribution for safe paralleling. It includes a very fast soft recovery antiparallel diode. Thermal resistance RthJC is 0.58 °C/W for the IGBT and 2.08 °C/W for the diode. Total power dissipation is 258 W at TC = 25 °C.
Feature Summary
- Advanced proprietary trench gate field-stop structure
- Tail-less switching off for high efficiency
- Positive VCE(sat) temperature coefficient
- Very fast soft recovery antiparallel diode
Applications
- Photovoltaic inverters
- Uninterruptible power supply
- Welding
- Power factor correction
- Very high frequency converters
Procurement Notes
Verify the exact package variant (D²PAK or TO-247) required for your design, as the datasheet covers multiple order codes. Confirm environmental compliance grades such as ECOPACK specifications before ordering. Check current product status to ensure availability, as component lifecycles may change. Ensure thermal management solutions align with the specified RthJC values for reliable operation.
Selection Notes
Select this component for applications requiring very high frequency conversion efficiency. The tight parameter distribution facilitates safer paralleling operations in higher power designs. Consider the positive VCE(sat) temperature coefficient for stable current sharing. Evaluate the trade-off between conduction losses and switching speeds inherent to the V series architecture.
Part Context
This device belongs to the V series of IGBTs developed by STMicroelectronics. The series represents an optimum compromise between conduction and switching losses. It utilizes advanced trench gate field-stop technology to maximize converter efficiency. The part is designed for robust performance in demanding power electronics environments.
Replacement Considerations
Datasheet revision history indicates that STGP30V60DF has been removed from the document. Verify if STGB30V60DF or STGW30V60DF are the direct functional equivalents for your specific packaging needs.
