STGW19NC60W

Overview

The STGW19NC60W is a single N-channel ultra-fast IGBT manufactured by STMicroelectronics, utilizing the PowerMESH™ process. It features a collector-emitter voltage (VCEO) of 600 V and a continuous collector current (IC) of 42 A at TC = 25°C in a TO-247 package. The device operates within a junction temperature range of -65 °C to 150 °C. Key electrical parameters include a maximum gate-emitter voltage of ±20 V, a typical saturation voltage (VCE(sat)) of 2.1 V at IC = 12 A, and a total switching energy (Ets) of 206 μJ under standard test conditions.

Feature Summary

• Utilizes advanced PowerMESH™ technology for optimized trade-off between switching performance and low on-state behavior.
• Features a low CRES/CIES ratio to eliminate susceptibility to cross-conduction.
• Designed for high-frequency operation suitable for demanding power conversion applications.

Applications

• High frequency motor controls
• Inverters and UPS systems
• Hard switch and resonant topologies for HF SMPS and PFC

Procurement Notes

Verify component authenticity through authorized channels as counterfeit risks exist. Confirm datasheet revision status, specifically Rev 3, which includes TO-247 packaging details. Ensure thermal management aligns with specified Rthj-case limits. Check RoHS compliance markings on ECOPACK® packages. Validate ordering codes against official ST documentation before procurement.

Selection Notes

Select this component for designs requiring 600 V blocking capability with moderate current handling up to 42 A. Consider the TO-247 package for through-hole mounting and superior thermal dissipation compared to smaller form factors. Evaluate gate resistance requirements to manage switching losses and dv/dt rates effectively within the specified operating temperature range.

Part Context

This part belongs to the STGx19NC60W family, which includes variants like STGB19NC60W and STGP19NC60W. These devices share identical electrical characteristics but differ in physical packaging configurations such as D2PAK, TO-220, and TO-247. The series is designed for general-purpose high-frequency power switching applications.

Replacement Considerations

Direct functional substitutes within the same family include STGB19NC60W and STGP19NC60W, differing only in package type. Verify pinout compatibility and thermal resistance specifications when substituting across different package styles to ensure adequate heat dissipation.

FAQ

What is the maximum collector-emitter voltage rating?

The absolute maximum collector-emitter voltage (VCES) is rated at 600 V with the gate-emitter voltage at 0 V.

How does the CRES/CIES ratio affect circuit design?

The low CRES/CIES ratio minimizes capacitive coupling effects, thereby preventing unwanted cross-conduction in half-bridge or full-bridge configurations without requiring additional snubber circuits.

What is the typical turn-off switching energy?

Under standard test conditions (VCC = 390 V, IC = 12 A, RG = 10 Ω), the typical turn-off switching energy (Eoff) is 125 μJ.