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STGW45HF60WDI is a single N-channel IGBT with a built-in antiparallel diode, manufactured by STMicroelectronics. It features a maximum collector-emitter voltage of 600 V and a maximum continuous collector current of 70 A. The device operates within a temperature range of -55 °C to +150 °C. Key electrical parameters include a maximum gate-emitter voltage of ±20 V, a typical gate-emitter threshold voltage of 5.75 V, and a rated energy of 1100 µJ. The component utilizes a TO-247 package with three pins for through-hole mounting.
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and thermal characteristics. Ensure that the procurement documentation explicitly references the TO-247 package variant and confirms RoHS compliance status prior to finalizing acquisition orders.
Select this component when designing circuits requiring a 600 V rating with high current handling capabilities up to 70 A. Consider the thermal resistance and package constraints of the TO-247 form factor for adequate heat dissipation in high-power density applications.
This part belongs to the HF series of IGBTs from STMicroelectronics, designed to balance conduction and switching losses. It is engineered for efficiency in high-frequency converters, offering improved performance over standard IGBTs through advanced trench gate field-stop technology.
Direct substitutes may include STGW35HF60WDI or STGW40HF60WDI for lower current requirements. Verify pin compatibility and thermal specifications before implementation.