ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 80A TO-247
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：240 A
- Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 60A
- Power - Max：375 W
- Switching Energy：1.09mJ (on), 626µJ (off)
- Input Type：Standard
- Gate Charge：306 nC
- Td (on/off) @ 25°C：51ns/160ns
- Test Condition：400V, 60A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247
- Grade：-
- Qualification：-
Download product information
Overview
The STGW60H65FB is an N-channel IGBT from the HB series, utilizing trench gate and field-stop technology. It features a maximum collector-emitter voltage (VCEO) of 650 V and a continuous collector current (Ic) of 80 A at 25°C. The typical collector-emitter saturation voltage (VceSAT) is 1.6 V at 60 A. Maximum power dissipation (Pd) is 375 W. The device operates within a junction temperature range of -40°C to +175°C. It is housed in a TO-247-3 package for through-hole mounting.
Feature Summary
- Advanced trench gate and field-stop structure optimizes the balance between conduction and switching losses.
- Slightly positive VCE(sat) temperature coefficient ensures safer operation during paralleling.
- Tight parameter distribution facilitates reliable parallel connection in high-power applications.
Applications
- High-efficiency frequency converters
- Motor control drives
- Industrial power supplies
Procurement Notes
Verify the specific suffix against official datasheets to confirm exact electrical characteristics and packaging options. Ensure the component meets RoHS standards if required by the design specifications. Cross-reference the manufacturer part number with authorized distributors to avoid counterfeit products. Confirm thermal resistance values match the intended heatsinking strategy.
Selection Notes
Select this component for designs requiring high-speed switching with minimized tail current. The HB series offers low thermal resistance suitable for compact power modules. Evaluate the 1.6 V saturation voltage against system efficiency targets. Consider the 175°C maximum junction temperature for robust thermal management in industrial environments.
Part Context
This device belongs to STMicroelectronics' HB series of IGBTs, designed for high-frequency applications. The series emphasizes efficiency improvements over previous generations through proprietary trench gate technology. It complements other ST power devices in motor control and energy conversion ecosystems.
Replacement Considerations
Direct replacements include STGW40H65FB and STGWA50HP65FB2, though current ratings and saturation voltages differ. Verify pin compatibility and thermal performance before substitution. Consult official cross-reference lists for validated alternatives.
