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The STGW75H65DFB2-4 is a high-speed N-channel IGBT from the HB2 series, utilizing a trench gate field-stop structure. It features a 650 V collector-emitter voltage rating and a continuous collector current of 115 A at 25 °C case temperature. The device operates with a maximum junction temperature of 175 °C and includes an integrated antiparallel diode. Key electrical parameters include a typical saturation voltage of 1.55 V at 75 A and a total power dissipation of 357 W. The component is housed in a TO247-4 package with four pins: Collector (Tab), Emitter, Gate, and Kelvin Emitter.
Verify the specific ordering code STGW75H65DFB2-4 against official manufacturer documentation to ensure correct part identification. Confirm that the TO247-4 package variant matches the required pinout configuration, specifically the inclusion of the Kelvin emitter terminal distinct from standard three-terminal packages.
Select this component for applications requiring high switching frequencies and minimized conduction losses. Ensure the thermal management design accommodates the specified thermal resistance values. Verify that the gate drive circuitry supports the recommended voltage levels and accounts for the total gate charge requirements during operation.
This device belongs to the STMicroelectronics HB2 series, representing an evolution of the proprietary trench gate field-stop technology. It is designed to maximize efficiency in fast-switching applications by balancing conduction and switching losses. The series targets industrial and renewable energy systems where high reliability and tight parameter distribution are critical.
Direct substitutes within the same family include STGW75H65DFB2, which lacks the fourth Kelvin pin. Verify pin compatibility before substitution. Other HB2 series variants may offer different current ratings or voltage classes but require careful evaluation of thermal and electrical specifications.