STGWA15H120F2

Overview

The STGWA15H120F2 is a single IGBT from the H series, utilizing a trench gate field-stop structure. It features a collector-emitter voltage of 1200 V and a continuous collector current of 15 A at 25°C. The typical saturation voltage is 2.1 V at 15 A. It operates within a junction temperature range of -55°C to 175°C and offers a minimum short-circuit withstand time of 5 µs at 150°C.

Feature Summary

• High-speed switching optimized for high-frequency converters
• Minimized tail current for reduced switching losses
• Positive VCE(sat) temperature coefficient for safe paralleling

Applications

• Uninterruptible power supplies
• Welding machines
• Photovoltaic inverters
• Power factor correction circuits
• High frequency converters

Procurement Notes

Verify the specific suffix 'A' against official datasheets to confirm lead frame plating or package variant details. Ensure thermal management aligns with the TO-247 package limits. Confirm RoHS compliance status through manufacturer documentation before integration into regulated equipment designs.

Selection Notes

Select this component for applications requiring high switching speeds and low conduction losses. The H series provides an optimal balance between efficiency and robustness. Consider the 1200 V rating for medium-voltage inverter topologies where reliable operation under high stress is required.

Part Context

This device belongs to the STMicroelectronics H series of trench gate field-stop IGBTs. It shares architectural similarities with the STGW25H120F2 and STGWA25H120DF2 but is rated for lower continuous current. The family emphasizes high-frequency performance and safe paralleling capabilities.

Replacement Considerations

STGW25H120F2: Higher current rating (25 A vs 15 A). STGWA25H120DF2: Similar specifications with potential packaging differences. Verify pinout compatibility and thermal resistance values when substituting.