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The STGWA20M65DF2 is a single N-channel IGBT from the M series, utilizing trench gate field-stop technology. It features a maximum collector-emitter voltage (VCEO) of 650 V and a continuous collector current (Ic) of 40 A at 25°C. The typical saturation voltage (VCE(sat)) is 1.65 V at Ic = 20 A. Power dissipation (Pd) reaches 300 W in a TO-247-3 package. Operating temperature ranges from -55°C to +175°C.
Verify the specific datasheet revision and ordering suffixes directly with STMicroelectronics or authorized distributors. Confirm RoHS compliance status and lead times through official channels before procurement.
Select this component for applications requiring high efficiency and robust short-circuit withstand capability within the 650 V class. Ensure thermal management solutions accommodate the specified power dissipation limits in the TO-247-3 package.
Part of the STMicroelectronics M series IGBTs, designed for optimal balance between inverter system performance and efficiency. This series emphasizes low-loss operation and safe paralleling due to tight parameter distribution.
Cross-reference with other M series variants like STGWA30M65DF2 or STGWA50M65DF2 for higher current ratings. Verify pinout compatibility and thermal resistance characteristics when substituting.