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The STGWA25M120DF3 is a trench gate field-stop IGBT from the M series, rated at 1200 V collector-emitter voltage and 25 A continuous collector current. It features a maximum junction temperature of 175 °C and offers a typical saturation voltage of 1.85 V at 25 A. The device supports 10 μs short-circuit withstand time and includes a soft- and fast-recovery antiparallel diode. Packaged in a TO-247 long lead through-hole case, it exhibits low thermal resistance and tight parameter distribution for safe paralleling.
Verify the specific ordering suffix to ensure the correct package variant, as the DF3 designation corresponds to the TO-247 long lead configuration. Confirm RoHS3 compliance status during sourcing. Cross-reference the manufacturer part number with official datasheets to validate electrical parameters against design requirements before procurement.
Select this component when designing circuits requiring a balance between low conduction losses and robust short-circuit tolerance. The positive temperature coefficient facilitates reliable parallel operation for higher current applications. Ensure the thermal management solution accommodates the specified power dissipation and junction temperature limits under worst-case operating conditions.
This device belongs to the STMicroelectronics M series IGBTs, which are engineered to provide an optimal balance between inverter system performance and efficiency. The series emphasizes low-loss characteristics and essential short-circuit functionality, making it suitable for demanding power electronics applications where reliability and thermal stability are critical.
STGYA50M120DF3 is listed as a parameter-equivalent alternative within the same product family.