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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 60A TO247
- Series：HB
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 30A
- Power - Max：260 W
- Switching Energy：151mJ (on), 293mJ (off)
- Input Type：Standard
- Gate Charge：149 nC
- Td (on/off) @ 25°C：37ns/146ns
- Test Condition：400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247 Long Leads
- Grade：-
- Qualification：-
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Overview
The STGWA30H65FB is a trench gate field-stop IGBT from the HB series, rated for 650 V collector-emitter voltage and 30 A continuous current. It utilizes an advanced proprietary structure to optimize conduction and switching performance. Key electrical parameters include a maximum junction temperature of 175 °C and a typical saturation voltage of 1.6 V at 30 A. The device features minimized tail current, tight parameter distribution, and low thermal resistance.
Feature Summary
- Advanced trench gate field-stop structure for optimized efficiency
- Co-packaged protection diode for fast application designs
- Positive VCE(sat) temperature coefficient for safe paralleling
Applications
- Frequency converters
- High-speed power switching circuits
- Industrial motor drives
Procurement Notes
Verify the exact suffix against official STMicroelectronics documentation to confirm pinout and package variations. Ensure the component meets industrial grade requirements and RoHS compliance standards before integration into final assemblies.
Selection Notes
Select this component when high switching speed and low conduction losses are required in 650 V applications. The tight parameter distribution supports reliable parallel operation, making it suitable for higher power density designs compared to standard IGBTs.
Part Context
This part belongs to the HB series of IGBTs developed by STMicroelectronics. The series represents a compromise between conduction and switching losses to maximize efficiency in frequency converter applications, utilizing proprietary trench gate technology.
Replacement Considerations
Direct substitutes within the same HB series family may offer similar electrical characteristics. Verify compatibility with existing thermal management solutions and gate drive requirements when considering alternative part numbers.
