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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 72A TO247
- Series：HB2
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：72 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 40A
- Power - Max：230 W
- Switching Energy：410µJ (off)
- Input Type：Standard
- Gate Charge：153 nC
- Td (on/off) @ 25°C：-/125ns
- Test Condition：400V, 40A, 4.7Ohm, 15V
- Reverse Recovery Time (trr)：140 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247 Long Leads
- Grade：-
- Qualification：-
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Overview
The STGWA40HP65FB is a high-speed N-channel IGBT from the HB series, utilizing an advanced trench gate field-stop structure. It features a collector-emitter voltage (VCEO) of 650 V and a continuous collector current (IC) of 40 A at TC = 100 °C, with a pulsed current capacity of 160 A. The typical saturation voltage (VCE(sat)) is 1.6 V at IC = 40 A. Total power dissipation reaches 283 W at TC = 25 °C. The device operates within a junction temperature range of -55 °C to 175 °C and includes a co-packaged protection diode.
Feature Summary
- Advanced proprietary trench gate field-stop structure for optimized conduction and switching performance.
- Minimized tail current and tight parameter distribution ensuring safe paralleling operation.
- Positive VCE(sat) temperature coefficient for stable thermal behavior under varying loads.
Applications
- Power factor correction (PFC)
- High-efficiency frequency converters
Procurement Notes
Verify the specific datasheet revision against the manufacturing date code on the component marking. Confirm that the TO-247 long leads package dimensions match the target PCB footprint requirements. Ensure the gate drive circuitry supports the specified ±20 V maximum rating to prevent dielectric breakdown during operation.
Selection Notes
Select this component when designing systems requiring high switching frequencies and low conduction losses. The positive temperature coefficient facilitates parallel connection without complex current balancing circuits. Evaluate the thermal resistance values to determine appropriate heatsinking for the expected ambient conditions and duty cycles.
Part Context
This part belongs to the STMicroelectronics HB series of IGBTs, which are engineered to balance conduction and switching losses. It shares the same package and general electrical architecture as other members in the 650 V HB lineup, differing primarily in rated current thresholds and specific saturation voltage characteristics.
Replacement Considerations
STGWA30HP65FB
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is 175 °C.
Does the device include an integrated diode?
Yes, it features a co-packaged protection diode.
What is the typical forward voltage of the integrated diode?
The typical forward voltage (VF) is 2 V at IF = 5 A.
