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Product Detailed Parameters
- Description：IGBT TRENCH FS 600V 40A TO-3P
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：80 A
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 20A
- Power - Max：167 W
- Switching Energy：200µJ (on), 130µJ (off)
- Input Type：Standard
- Gate Charge：116 nC
- Td (on/off) @ 25°C：38ns/149ns
- Test Condition：400V, 20A, 15V
- Reverse Recovery Time (trr)：40 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3P
- Grade：-
- Qualification：-
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Overview
The STGWT20V60DF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It utilizes Trench Gate Field Stop technology and is housed in a TO-3P package for through-hole mounting. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 20 A at 25°C. Key electrical parameters include a maximum power dissipation of 167 W, a collector-emitter saturation voltage of 2.35 V, and a gate-emitter voltage limit of ±20 V. It operates within a temperature range of -55°C to +175°C.
Feature Summary
- Employs advanced trench gate field-stop architecture for optimized switching performance.
- Features tight parameter distribution to ensure safe paralleling operation.
- Includes a soft and fast recovery antiparallel diode integrated with the IGBT.
Applications
- High-speed switching converters
- Motor drive systems
- Power supply units
Procurement Notes
Verify the specific suffix 'T' against official datasheets to confirm the exact packaging configuration, as it typically denotes tube packaging distinct from other variants. Ensure the component matches the required thermal resistance and pinout specifications for the target PCB design. Cross-reference the manufacturer's latest documentation to confirm current production status and availability constraints.
Selection Notes
Select this component when a balance between conduction and switching losses is required for high-frequency applications. The positive VCE(sat) temperature coefficient facilitates reliable parallel operation for higher current demands. Consider the TO-3P package dimensions and thermal management requirements during the circuit layout phase to maximize efficiency.
Part Context
This part belongs to the STGW series of IGBTs, which are designed using proprietary trench gate field-stop structures. This technology aims to provide an optimum compromise between conduction and switching losses, maximizing the efficiency of high switching frequency converters compared to standard planar technologies.
Replacement Considerations
Direct substitutes within the same family include the STGW20V60F and STGW40V60DF, provided the current rating and package compatibility align with the application requirements. Verify that alternative parts maintain similar switching characteristics and thermal properties.
