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The STGYA120M65DF2AG is an N-channel IGBT from the M series, utilizing a trench gate field-stop structure. It features a collector-emitter voltage of 650 V and a continuous collector current of 120 A at 25 °C case temperature. The typical saturation voltage is 1.65 V at 120 A. It supports a minimum short-circuit withstand time of 6 μs and operates up to a maximum junction temperature of 175 °C. The device includes a soft and fast-recovery antiparallel diode.
Verify the specific suffix 'AG' against official STMicroelectronics documentation to confirm automotive qualification status and exact package variant. Ensure the ordering code matches the required thermal interface and pinout configuration for the target application design.
Select this component for applications requiring high efficiency and robust short-circuit protection in the 650 V range. Consider the 120 A rating and 175 °C max junction temperature for high-power density designs. Verify thermal resistance requirements match the heatsink solution.
This part belongs to the STMicroelectronics M series IGBTs, designed for optimal balance between inverter system performance and efficiency. The series emphasizes low-loss operation and essential short-circuit functionality, making it suitable for demanding industrial and automotive power conversion environments.
Direct replacements within the same M series include STGYA120M65DF2. Cross-series comparisons should verify pin compatibility and electrical parameters such as VCE(sat) and switching times.