STL20DN10F7

Overview

STL20DN10F7 is an N-channel enhancement mode MOSFET from the STripFET F7 series. It features a Power Flat package with 8 pins and SMD installation. Key parameters include a maximum drain-source voltage of 100 V, a continuous drain current of 20 A, and a typical on-resistance of 5 mΩ. The device operates within a temperature range of -55 °C to +175 °C, with a maximum power dissipation of 5 W. Gate threshold voltage ranges from 2 V to 4 V, and gate-source voltage limits are ±20 V.

Feature Summary

• Utilizes STripFET F7 technology with enhanced trench-gate structure for low on-state resistance
• Provides ultra-low capacitance for high-frequency switching operations
• Features low Crss/Ciss ratio for improved EMI immunity
• Demonstrates robust avalanche ruggedness

Applications

• Three-phase brushless motor control systems
• Industrial automation applications
• Residential and building automation
• Power supplies and converters
• Smart street lighting solutions

Procurement Notes

Verify the specific part number STL20DN10F7 against official manufacturer documentation before procurement. Confirm that the component matches the required electrical specifications and package type. Ensure compliance with relevant regulatory standards such as RoHS. Check for any product longevity commitments or end-of-life notifications from the manufacturer to ensure supply chain stability for the intended project duration.

Selection Notes

Select this component for designs requiring high efficiency in low-voltage power conversion. The low on-resistance minimizes conduction losses, while the fast switching characteristics support higher frequency operation. Consider the thermal performance and package limitations when designing heat dissipation strategies. Verify compatibility with gate drive requirements given the specified threshold voltage range.

Part Context

The STL20DN10F7 belongs to the STripFET F7 family of low-voltage power MOSFETs. This series is characterized by enhanced trench-gate technology designed to optimize the figure of merit. These devices are engineered for applications demanding high efficiency and compact form factors, leveraging advanced silicon processes to achieve superior performance metrics compared to previous generations.

Replacement Considerations

STL110N10F7 and STL90N10F7 are confirmed substitutes within the same STripFET F7 series. These alternatives share similar packaging and core technology but differ in current handling capabilities. Evaluate the specific current requirements of the application to determine if a higher-rated device is necessary or if the original specification is sufficient.