STL24NM60N

Single FETs, MOSFETs Overview

The STL24NM60N is an N-channel Power MOSFET utilizing MDmesh II technology, housed in a PowerFLAT™ 8x8 HV package. It features a drain-source voltage of 600 V and a maximum continuous drain current of 16 A at 25 °C case temperature. The typical static on-resistance is 0.200 Ω, with a maximum rated at 0.215 Ω under specified test conditions. Key electrical parameters include a gate threshold voltage ranging from 2 to 4 V and a total gate charge of approximately 44 nC. The device supports a pulsed drain current of 64 A and operates with a maximum junction temperature of 150 °C.

Single FETs, MOSFETs Feature Summary

• Developed using second-generation MDmesh technology combining vertical structure with strip layout for low on-resistance and gate charge.
• 100% avalanche tested to ensure robustness against unclamped inductive switching events.
• Low input capacitance and intrinsic gate resistance facilitate efficient high-frequency switching performance.

Single FETs, MOSFETs Applications

• High efficiency DC-DC converters
• General purpose switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code STL24NM60N matches the required 600 V rating and PowerFLAT 8x8 HV package configuration. Confirm that the tape and reel packaging aligns with automated assembly requirements. Ensure the component status is confirmed as full production data before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component when a 600 V breakdown voltage and low RDS(on) are critical for converter efficiency. The PowerFLAT 8x8 HV package offers a compact footprint suitable for space-constrained designs. Consider the thermal resistance values and mounting conditions to ensure the junction temperature remains within the 150 °C limit during operation.

Single FETs, MOSFETs Part Context

This part belongs to STMicroelectronics' MDmesh II family of power MOSFETs. It is designed for demanding high-efficiency conversion applications where low conduction losses and fast switching speeds are prioritized. The device integrates advanced silicon technology to minimize energy loss during both on-state and switching transitions.

Single FETs, MOSFETs Replacement Considerations

Consult official ST documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers or different MDmesh generations without verifying pinout, thermal characteristics, and electrical ratings against the original specifications.

Single FETs, MOSFETs FAQ

What is the maximum repetitive avalanche energy for the STL24NM60N?

The single pulse avalanche energy is rated at 300 mJ, starting from a junction temperature of 25 °C with ID equal to IAR and VDD at 50 V.

How does the source-drain diode perform in terms of reverse recovery?

At ISD = 16 A and di/dt = 100 A/µs, the reverse recovery time (trr) is typically 34 ns, with a reverse recovery charge (Qrr) of 4.6 µC at 25 °C.