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The STL50DN6F7 is a dual N-channel Power MOSFET from STMicroelectronics, utilizing STripFET F7 technology with an enhanced trench gate structure. It operates at a 60 V breakdown voltage and features a typical on-state resistance of 9 mOhm. The device supports a continuous drain current of 57 A and is housed in a PowerFLAT 5x6 double island package. This configuration reduces internal capacitance and gate charge for faster switching efficiency.
Verify the specific ordering code against the manufacturer's official datasheet to ensure compatibility with the required package variant. Confirm that the dual N-channel specification matches the circuit requirements before finalizing procurement decisions.
Select this component when a dual N-channel topology is required in a space-constrained design. The STripFET F7 technology offers improved switching performance compared to previous generations, making it suitable for applications demanding high efficiency and thermal management within a small footprint.
This part belongs to the STripFET F7 series of low-voltage power MOSFETs. It shares the enhanced trench-gate structure technology found in other models like the STL50N6F7, but differs by integrating two channels into one package for simplified board layout.