STL50DN6F7

STL50DN6F7

$1.50
  • Description:MOSFET 2N-CH 60V 57A POWERFLAT
  • Series:STripFET™

SKU:2e9155a893c9 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 60V 57A POWERFLAT
  • Series:STripFET™
  • Mfr:STMicroelectronics
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:57A (Tc)
  • Rds On (Max) @ Id, Vgs:11mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:1035pF @ 30V
  • Power - Max:62.5W
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerVDFN
  • Supplier Device Package:PowerFlat™ (5x6)
  • Grade:-
  • Qualification:-

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STL50DN6F7

Overview

The STL50DN6F7 is a dual N-channel Power MOSFET from STMicroelectronics, utilizing STripFET F7 technology with an enhanced trench gate structure. It operates at a 60 V breakdown voltage and features a typical on-state resistance of 9 mOhm. The device supports a continuous drain current of 57 A and is housed in a PowerFLAT 5x6 double island package. This configuration reduces internal capacitance and gate charge for faster switching efficiency.

Feature Summary

  • Dual N-channel configuration within a single compact package
  • STripFET F7 technology for low on-state resistance and reduced internal capacitance
  • PowerFLAT 5x6 double island package design

Applications

  • Industrial motor control systems
  • DC-DC converter circuits
  • Power management modules

Procurement Notes

Verify the specific ordering code against the manufacturer's official datasheet to ensure compatibility with the required package variant. Confirm that the dual N-channel specification matches the circuit requirements before finalizing procurement decisions.

Selection Notes

Select this component when a dual N-channel topology is required in a space-constrained design. The STripFET F7 technology offers improved switching performance compared to previous generations, making it suitable for applications demanding high efficiency and thermal management within a small footprint.

Part Context

This part belongs to the STripFET F7 series of low-voltage power MOSFETs. It shares the enhanced trench-gate structure technology found in other models like the STL50N6F7, but differs by integrating two channels into one package for simplified board layout.

STL50DN6F7STL50DN6F7
$1.50
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