STL8DN10LF3

STL8DN10LF3

$2.33
  • Description:MOSFET 2N-CH 100V 20A POWERFLAT
  • Series:STripFET™ III

SKU:20b1efc83736 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 100V 20A POWERFLAT
  • Series:STripFET™ III
  • Mfr:STMicroelectronics
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):100V
  • Current - Continuous Drain (Id) @ 25°C:20A
  • Rds On (Max) @ Id, Vgs:35mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:20.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:970pF @ 25V
  • Power - Max:70W
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerVDFN
  • Supplier Device Package:PowerFlat™ (5x6)
  • Grade:Automotive
  • Qualification:AEC-Q101

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STL8DN10LF3

Overview

The STL8DN10LF3 is an automotive-grade dual N-channel Power MOSFET utilizing STripFET III technology. It features a 100 V drain-source voltage and a typical on-resistance of 25 mΩ, with a maximum rating of 35 mΩ at VGS=10 V. The device supports a continuous drain current of 7.8 A at Tpcb=25 °C and handles pulsed currents up to 31.2 A. Packaged in a PowerFLAT 5x6 double island format, it offers a junction temperature range of -55 to 175 °C and includes 100% avalanche testing for ruggedness.

Feature Summary

  • AEC-Q101 qualified for automotive reliability standards
  • STripFET III technology minimizes on-resistance and gate charge
  • Wettable flank package option available for enhanced solder joint inspection
  • Logic level gate threshold voltage enables direct drive from standard logic

Applications

  • Automotive switching applications
  • High-side and low-side power switching
  • DC-DC converter circuits

Procurement Notes

Verify the specific package variant when ordering, as the wettable flank option requires explicit confirmation with ST sales offices. Confirm that the application environment remains within the specified thermal limits, particularly regarding the Rthj-pcb value when mounted on FR-4 boards. Ensure ESD precautions are observed during handling due to the sensitivity of the gate structure.

Selection Notes

Select this component for designs requiring high thermal stability up to 175 °C and robust avalanche performance. The dual N-channel configuration allows for efficient half-bridge or synchronous rectifier topologies. Consider the 35 mΩ maximum RDS(on) for conduction loss calculations under worst-case conditions rather than relying solely on the typical 25 mΩ value.

Part Context

This device belongs to STMicroelectronics' STripFET III family of power MOSFETs, optimized for automotive environments. It complements other medium-voltage N-channel devices by offering a balance of low on-resistance and fast switching speeds within a compact surface-mount footprint designed for high-density PCB layouts.

Replacement Considerations

Direct substitutes must match the 100 V rating, dual N-channel topology, and PowerFLAT 5x6 package dimensions. Verify pinout compatibility and ensure equivalent thermal resistance characteristics to maintain system cooling requirements without redesigning the heat dissipation path.

FAQ

What is the maximum operating junction temperature?

The STL8DN10LF3 supports an operating junction temperature range from -55 °C to 175 °C.

Is the device tested for avalanche ruggedness?

Yes, the device is 100% avalanche rated, with a single pulse avalanche energy capability of 190 mJ starting at TJ=25 °C.

How does the wettable flank package benefit assembly?

The wettable flank option allows for visual inspection of the solder joints on the side leads, ensuring higher reliability in automated optical inspection (AOI) processes.

STL8DN10LF3STL8DN10LF3
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