STS4C3F60L

$1.13

Description：MOSFET N/P-CH 60V 4A/3A 8SOIC
Series：STripFET™

SKU:054e9e3f3656 Category: FET, MOSFET Arrays Brand: STMicroelectronics

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 60V 4A/3A 8SOIC
Series：STripFET™
Mfr：STMicroelectronics
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：4A, 3A
Rds On (Max) @ Id, Vgs：55mOhm @ 2A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：1030pF @ 25V
Power - Max：2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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STS4C3F60L

Overview

The STS4C3F60L is a complementary pair of N-channel and P-channel Power MOSFETs in an SO-8 package. The N-channel device offers a drain-source voltage (VDS) of 60 V, continuous drain current (ID) of 4 A at 25°C, and on-resistance (RDS(on)) below 0.056 Ω. The P-channel counterpart provides 60 V VDS, 3 A ID, and RDS(on) under 0.120 Ω. Both transistors utilize the Single Feature Size™ strip-based process for high packing density and rugged avalanche characteristics.

Feature Summary

Complementary N-channel and P-channel configuration within a single component
Single Feature Size™ strip-based manufacturing process
Low threshold drive capability
Standard outline designed for automated surface mount assembly

Applications

Switching applications

Procurement Notes

Verify the specific ordering suffix to confirm packaging details, as the datasheet indicates tape and reel availability. Ensure compliance with environmental standards such as ECOPACK lead-free specifications when integrating into designs. Confirm that the application does not involve military, aerospace, or life-sustaining systems, which are explicitly excluded from warranty coverage.

Selection Notes

Select this complementary pair for space-constrained designs requiring both N-channel and P-channel switching in a compact SO-8 footprint. The low gate threshold voltage facilitates efficient logic-level driving. Evaluate thermal resistance parameters against the expected ambient temperature and copper pad size to ensure junction temperatures remain within the specified maximum operating limit.

Part Context

This component belongs to the STripFET™ Power MOSFET family developed by STMicroelectronics. It represents a specialized complementary pair design intended to simplify circuit layouts where matched N-channel and P-channel switching elements are required. The technology focuses on minimizing on-resistance through advanced strip-based processing techniques.

Replacement Considerations

Direct replacements must match the SO-8 package, 60 V rating, and complementary N/P-channel configuration. Verify that substitute components meet or exceed the original on-resistance and current handling capabilities while maintaining compatible gate threshold voltages for the existing driver circuitry.