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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 4A 8SOIC
- Series：STripFET™
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：4A
- Rds On (Max) @ Id, Vgs：50mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：330pF @ 25V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The STS4DNF30L is an N-channel Power MOSFET from STMicroelectronics, rated for a drain-source voltage of 30 V and a continuous drain current of 4 A. It features a maximum on-resistance of 0.045 Ohms at 10 V gate drive. The device utilizes the STripFET II technology, which employs a unique single feature size strip-based process to achieve high packing density and low on-resistance. It is housed in an SO-8 package designed for automated surface mount assembly.
Feature Summary
- STripFET II technology provides rugged avalanche characteristics and manufacturing reproducibility through less critical alignment steps.
- Low threshold gate drive capability facilitates easy interface with standard logic levels.
- Standard SO-8 outline supports efficient automated surface mount assembly processes.
Applications
- DC-DC converters
- Power switching applications
- Industrial motor control
Procurement Notes
Verify the component status as NRND (Not Recommended for New Designs) or Active before procurement planning. Confirm the specific ordering suffix matches the required package and tape/reel configuration. Ensure compatibility with existing PCB footprints for the SO-8 package. Check for any end-of-life notices that may affect long-term supply continuity.
Selection Notes
Select this part for applications requiring 30 V breakdown and up to 4 A current handling with low conduction losses. The 0.045 Ohm Rds(on) makes it suitable for efficiency-critical power stages. Consider the SO-8 thermal performance for the expected power dissipation. Verify gate drive voltage requirements align with the low threshold specification.
Part Context
This component belongs to the STripFET II family of N-channel MOSFETs. It shares the underlying strip-based process technology with other devices in the series, such as the STS2DNF30L and STS4DNF60L. The family emphasizes high packing density and ruggedness for medium-voltage power switching applications.
Replacement Considerations
Direct substitutes within the same family include the STS2DNF30L (3 A rating) and STS4DNF60L (60 V rating). Verify pinout compatibility and electrical ratings match the original design requirements before substitution. Cross-reference datasheets for thermal and switching characteristics differences.
