STS8DNF3LL

STS8DNF3LL

$1.60
  • Description:MOSFET 2N-CH 30V 8A 8SOIC
  • Series:STripFET™ II

SKU:fc34176fd391 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:MOSFET 2N-CH 30V 8A 8SOIC
  • Series:STripFET™ II
  • Mfr:STMicroelectronics
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:8A
  • Rds On (Max) @ Id, Vgs:20mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:17nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:800pF @ 25V
  • Power - Max:1.6W
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

Download product information

STS8DNF3LL

Overview

The STS8DNF3LL is a dual N-channel Power MOSFET developed using STMicroelectronics’ STripFET II process. It features a 30 V breakdown voltage and an SO-8 package. The device provides a typical on-resistance of 0.017 Ohm and supports an 8 A current rating. Designed to minimize input capacitance and gate charge, it offers an optimal R DS(on) x Q g trade-off at 4.5 V. This configuration reduces both conduction and switching losses, making the component suitable for primary switching in advanced high-efficiency isolated DC-DC converters.

Feature Summary

  • Developed using STripFET II technology specifically designed to minimize input capacitance and gate charge
  • Optimized R DS(on) x Q g trade-off at 4.5 V to reduce conduction and switching losses

Applications

  • Primary switch in advanced high-efficiency isolated DC-DC converters
  • Telecom applications
  • Computer applications
  • Applications with low gate charge driving requirements

Procurement Notes

Verify the specific ordering code against official manufacturer documentation before procurement. Confirm that the part number matches the required STripFET II generation and SO-8 package variant. Ensure compatibility with the intended thermal management solution for the specified current ratings. Cross-reference the datasheet revision date to confirm technical specifications align with design requirements.

Selection Notes

Select this component when designing isolated DC-DC converters requiring minimized gate drive power. The STripFET II process is critical for achieving low input capacitance. Verify that the 4.5 V gate drive condition meets the system's logic level requirements. Consider the SO-8 package thermal characteristics for the expected operating environment.

Part Context

This component belongs to STMicroelectronics' low-voltage Power MOSFET portfolio, which ranges from 12 V to 30 V. It utilizes the STripFET II technology, distinct from newer iterations like STripFET V found in other series such as the STS8DN3LLH5. The product line targets industrial and automotive applications requiring efficient power switching.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

STS8DNF3LLSTS8DNF3LL
$1.60
Buy Now