SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The STS8DNF3LL is a dual N-channel Power MOSFET developed using STMicroelectronics’ STripFET II process. It features a 30 V breakdown voltage and an SO-8 package. The device provides a typical on-resistance of 0.017 Ohm and supports an 8 A current rating. Designed to minimize input capacitance and gate charge, it offers an optimal R DS(on) x Q g trade-off at 4.5 V. This configuration reduces both conduction and switching losses, making the component suitable for primary switching in advanced high-efficiency isolated DC-DC converters.
Verify the specific ordering code against official manufacturer documentation before procurement. Confirm that the part number matches the required STripFET II generation and SO-8 package variant. Ensure compatibility with the intended thermal management solution for the specified current ratings. Cross-reference the datasheet revision date to confirm technical specifications align with design requirements.
Select this component when designing isolated DC-DC converters requiring minimized gate drive power. The STripFET II process is critical for achieving low input capacitance. Verify that the 4.5 V gate drive condition meets the system's logic level requirements. Consider the SO-8 package thermal characteristics for the expected operating environment.
This component belongs to STMicroelectronics' low-voltage Power MOSFET portfolio, which ranges from 12 V to 30 V. It utilizes the STripFET II technology, distinct from newer iterations like STripFET V found in other series such as the STS8DN3LLH5. The product line targets industrial and automotive applications requiring efficient power switching.
Public confirmed substitute part numbers are not available in the provided documentation.