STW24N60M6

$2.51

Description：MOSFET N-CH 600V TO247
Series：MDmesh™ M6
Mfr：STMicroelectronics
Package：Tube

SKU:7a1031be7bd0 Category: Single FETs, MOSFETs Brand: STMicroelectronics

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Product introduction

STW24N60M6 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 600V TO247. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for STW24N60M6

Description：MOSFET N-CH 600V TO247
Series：MDmesh™ M6
Mfr：STMicroelectronics
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：17A (Tj)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for STW24N60M6

STW24N60M6

Single FETs, MOSFETs Overview

The STW24N60M6 is an N-channel enhancement mode Power MOSFET from the MDmesh M6 series, housed in a TO-247 package. It features a maximum drain-source voltage of 600 V and a continuous drain current of 17 A at Tcase = 25 °C. The device exhibits a maximum static drain-source on-resistance of 190 mΩ at VGS = 10 V. Total gate charge is typically 23 nC at VDD = 480 V and ID = 17 A. Thermal resistance from junction to case is 0.96 °C/W, with total dissipation rated at 130 W at Tcase = 25 °C.

Single FETs, MOSFETs Feature Summary

MDmesh M6 technology provides reduced switching losses and lower RDS(on) per area compared to previous generations.
Integrated Zener protection between gate and source for enhanced robustness.
100% avalanche tested to ensure reliability under unclamped inductive load conditions.

Single FETs, MOSFETs Applications

Switching applications
LLC converters
Boost PFC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code against official STMicroelectronics documentation to confirm technical specifications and package type. Ensure compatibility with required thermal management solutions given the TO-247 form factor. Confirm environmental compliance grades such as ECOPACK if applicable to your manufacturing standards. Cross-reference datasheet revision dates to validate parameter accuracy before finalizing component selection.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high-voltage handling with optimized switching efficiency. The low gate input resistance facilitates driver interface simplicity. Consider the thermal resistance values when designing heatsinking strategies for continuous operation. Evaluate the avalanche energy ratings if the application involves significant inductive loads or potential transient overvoltage events.

Single FETs, MOSFETs Part Context

This part belongs to the MDmesh family of super-junction MOSFETs developed by STMicroelectronics. The M6 generation builds upon prior technologies to improve power density and switching performance. It is designed for high-efficiency power conversion systems where minimizing conduction and switching losses is critical for overall system performance.