STW56N60M2

Single FETs, MOSFETs Overview

STW56N60M2 is an N-channel Power MOSFET developed using MDmesh M2 technology, housed in a TO-247-4 package. It features a breakdown voltage of 600 V and a typical on-resistance of 45 mOhm at 10 V gate drive. The device supports a continuous drain current of 52 A. Key electrical characteristics include extremely low gate charge and an optimized output capacitance profile. The component is 100% avalanche tested and includes internal Zener protection. An extra driving source pin enhances switching performance by reducing parasitic inductance effects.

Single FETs, MOSFETs Feature Summary

• MDmesh M2 technology with strip layout for low on-resistance
• Optimized switching characteristics via extra driving source pin
• Internal Zener protection for gate stability
• 100% avalanche tested for ruggedness

Single FETs, MOSFETs Applications

• High efficiency DC-DC converters
• Power factor correction (PFC) circuits
• Industrial motor drives
• Uninterruptible power supplies (UPS)

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm package variant and tape/reel specifications. Confirm RoHS compliance status through official STMicroelectronics documentation. Check for active lifecycle status as automotive or industrial grades may have different availability. Ensure thermal management design accounts for the TO-247-4 package dissipation capabilities under actual operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when high current handling and low conduction losses are critical. The four-pin TO-247-4 package enables separate Kelvin source connection for improved switching speed. Compare total gate charge against competitor devices to evaluate driver requirements. Verify that the 600 V rating provides sufficient margin for the target application's peak voltage stresses.

Single FETs, MOSFETs Part Context

The STW56N60M2 belongs to the MDmesh M2 series of high-voltage power MOSFETs from STMicroelectronics. This series utilizes advanced vertical structure improvements over previous generations. It targets applications requiring superior efficiency in hard-switching topologies. The TO-247-4 form factor distinguishes it from standard three-pin variants by offering enhanced gate drive control.

Single FETs, MOSFETs Replacement Considerations

Direct replacements within the same family include STW30N60M2 and STW55N60M2, which share similar voltage ratings but differ in current capacity and on-resistance. Cross-family substitution requires careful evaluation of gate charge and thermal resistance parameters.