T1G4020036-FS

Overview

The Qorvo T1G4020036-FS is a discrete Gallium Nitride on Silicon Carbide (GaN) High Electron Mobility Transistor (HEMT). It features a dual-channel configuration delivering 2 x 200 W output power at the P3dB compression point. The device operates across a wide frequency range from DC to 3.5 GHz and supports a 50 V supply rail. Designed for high-power applications, it includes a pre-matched input network to simplify circuit integration.

Feature Summary

• Utilizes GaN on SiC HEMT technology for high efficiency and power density
• Features integrated pre-matched input network for simplified design
• Supports operation with standard 50 V power supply rails

Applications

• High-power radar systems
• Electronic warfare platforms
• Broadband communication infrastructure

Procurement Notes

Verify component authenticity through authorized channels. Confirm that the received part matches the exact T1G4020036-FS designation. Ensure storage conditions comply with manufacturer guidelines for sensitive semiconductor devices. Check for any specific handling instructions regarding electrostatic discharge protection during assembly.

Selection Notes

Select this component when designing circuits requiring high output power in the sub-3.5 GHz spectrum. The pre-matched input reduces external matching network complexity. Consider thermal management requirements due to high power dissipation. Evaluate system voltage constraints against the specified 50 V operating rail.

Part Context

This device belongs to Qorvo's portfolio of discrete RF power transistors. It represents a high-performance solution leveraging advanced GaN-on-SiC material properties. The product line targets demanding applications where size, weight, and power efficiency are critical constraints.

Replacement Considerations

No public confirmed substitute part numbers are available.