TAV1-551+

Overview

The TAV1-551+ is an enhancement mode pseudomorphic high electron mobility transistor (E-PHEMT) designed for ultra-low noise and low current applications. It operates across a wideband frequency range of 0.045 to 6 GHz with a single positive supply voltage. Key electrical specifications include a typical noise figure of 0.5 dB at 0.9 GHz, gain of 20.9 dB at 0.9 GHz, and output IP3 of +24 dBm at 2 GHz. The device features a compact MCLP package measuring 1.18 x 1.42 x 0.85 mm.

Feature Summary

• Utilizes E-PHEMT technology for operation with a single positive supply voltage
• Provides outstanding noise figure performance particularly below 2.5 GHz
• Combines high gain and low noise in a single device architecture
• Features a small footprint MCLP package for dense layouts and excellent thermal contact

Applications

• Cellular communication systems
• ISM band applications
• GSM networks
• WCDMA infrastructure
• WiMax and WLAN systems

Procurement Notes

Verify RoHS compliance status by checking the datasheet or manufacturer website, as indicated by the plus suffix. Confirm that external biasing and matching components are included in the system design, as the device requires them for operation. Ensure the application environment stays within the specified operating temperature range of -40 to 85 °C. Validate that the drain-source voltage does not exceed the maximum rating of 5 V to prevent permanent damage.

Selection Notes

Select this component when ultra-low noise figure is critical, especially for frequencies below 2.5 GHz. The device is suitable for applications requiring high gain combined with low noise in a compact form factor. Consider the need for external biasing and matching circuits during the design phase. Evaluate the power dissipation capabilities against the total dissipated power rating of 360 mW. Ensure the system can accommodate the specific gate and drain voltage requirements for optimal performance.

Part Context

The TAV1-551+ belongs to Mini-Circuits' portfolio of E-PHEMT transistors designed for RF amplification. It is housed in the TE2769 case style, which is a plastic package with an exposed paddle and matte-tin plated lead finish. The device is available in tape and reel packaging for automated assembly. It is part of a family of devices offering various gain and noise characteristics for different frequency bands.

Replacement Considerations

The Broadcom ATF-331M4 is identified in documentation for comparison purposes only. Suitability for model replacement must be determined by the customer based on electrical performance criteria, stimulus conditions, and application compatibility. Verify all parameters before substituting.

FAQ

What is the operational gate voltage range?

The operational gate voltage ranges from 0.22 V to 0.46 V when the drain-source voltage is 3 V and the drain-source current is 15 mA.

How is the device protected against electrostatic discharge?

The device has a Human Body Model (HBM) ESD rating of Class 1A, corresponding to 250V to less than 500V, in accordance with ANSI/ESD STM 5.1 - 2001.

What is the moisture sensitivity level?

The device has a Moisture Sensitivity Level (MSL) of 1 in accordance with IPC/JEDEC J-STD-020D.