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The TBB1005EMTL-E is a twin built-in biasing circuit MOS FET IC designed for VHF/UHF RF amplifier applications. It features dual-gate depletion mode operation within a compact CMPAK-6 plastic package. The device supports a minimum drain-source breakdown voltage of 6V and handles a maximum absolute drain current of 0.03A. Key electrical characteristics include a maximum feedback capacitance (Crss) of 0.04pF and a minimum power gain of 16dB. It operates at temperatures up to 150°C and complies with EAR99 regulations.
Verify the specific suffix ETL against official Renesas documentation to confirm lead-free status and packaging type. Ensure the CMPAK-6 package dimensions align with PCB layout requirements. Confirm that the 150°C operating temperature range meets the thermal constraints of the target application environment before finalizing procurement.
Select this component when designing VHF or UHF amplifiers requiring integrated biasing to reduce external component count. The low feedback capacitance of 0.04pF makes it suitable for high-frequency stability. Verify that the 6V breakdown voltage and 0.03A current limits are sufficient for the intended signal levels and power dissipation requirements in the dual-gate configuration.
This part belongs to the Renesas discrete semiconductor transistor lineup, specifically categorized under MOS FETs. It is distinct from Renesas microcontrollers like the SH7285 or programmable buffers like the 5P1105. The TBB series focuses on specialized RF functions rather than general-purpose logic or processing tasks.
Consult official Renesas obsolescence notices for potential end-of-life status. Identify cross-reference parts with identical CMPAK-6 packaging, dual-gate depletion mode topology, and matching Crss and gain specifications. Verify pin compatibility and thermal performance before substitution.