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Product Detailed Parameters
- Description：MOSFET N/P-CH 200V 2A 8VDFN
- Series：-
- Mfr：Microchip Technology
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：200V
- Current - Continuous Drain (Id) @ 25°C：2A (Ta)
- Rds On (Max) @ Id, Vgs：7Ohm @ 1A, 10V, 8Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA, 2.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：110pF @ 25V, 200pF @ 25V
- Power - Max：-
- Operating Temperature：-55°C ~ 175°C
- Mounting Type：Surface Mount
- Package / Case：8-VDFN Exposed Pad
- Supplier Device Package：8-VDFN (6x5)
- Grade：-
- Qualification：-
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Overview
The TC6321T-V/9U is a high-voltage, low-threshold N-channel and P-channel MOSFET pair in an 8-lead VDFN package. It features integrated gate-to-source resistors and Zener diode clamps. The N-channel provides a 200V breakdown voltage with 7 Ohms on-resistance at 10V gate drive. The P-channel offers -200V breakdown with 8 Ohms on-resistance at -10V gate drive. Both channels exhibit fast switching speeds with 15ns rise/fall times and operate from -40°C to +150°C.
Feature Summary
- Integrated gate-to-source resistors and Zener diode clamps for high-voltage protection
- Independent, electrically isolated N- and P-channels utilizing advanced vertical DMOS structure
- Low threshold voltage and low on-resistance for efficient switching
- Free from secondary breakdown due to positive temperature coefficient inherent in MOS devices
Applications
- High-voltage pulser circuits
- Medical ultrasound transducer drivers
- General-purpose line drivers
- Logic-level interfaces
Procurement Notes
Verify the specific ordering suffix 'V/9U' matches the required temperature range (-55°C to +175°C) and tape-and-reel packaging format. Confirm that the 8-lead Very Thin Plastic Dual Flat, No Lead (VDFN) package dimensions align with your PCB footprint requirements. Ensure compatibility with the intended gate drive voltages for optimal performance.
Selection Notes
Select this component when designing circuits requiring high-voltage switching capabilities combined with fast response times. The integrated clamping features simplify driver design by eliminating external protection components. Consider the thermal resistance characteristics of the exposed pad package for effective heat dissipation in compact layouts.
Part Context
This device belongs to the TC6321 series of complementary MOSFET pairs manufactured by Microchip Technology. It utilizes silicon-gate manufacturing processes to achieve high power-handling capabilities similar to bipolar transistors while maintaining high input impedance. The series is specifically engineered for applications demanding low threshold voltages and high breakdown voltages.
Replacement Considerations
Consult official Microchip documentation for verified equivalent part numbers or direct replacements within the same product family. Cross-reference electrical parameters such as breakdown voltage, on-resistance, and package type to ensure functional compatibility before substitution.
