TE28F128J3D75B TR

Memory IC Overview

The TE28F128J3D75B TR is a StrataFlash NOR memory IC with 128Mbit capacity, organized as 16M x 8 or 8M x 16. It features a parallel interface and 75 ns access time. The device operates on 2.7V to 3.6V power supply within -40°C to 85°C ambient temperature range. It utilizes a 56-TSOP package for surface mount installation.

Memory IC Feature Summary

• Non-volatile storage architecture
• Parallel data interface
• Single bit per cell technology

Memory IC Applications

• Embedded system firmware storage
• Industrial control systems
• Consumer electronics firmware

Memory IC Procurement Notes

Verify the specific suffix 'TR' indicates tape and reel packaging configuration. Confirm RoHS compliance status matches project requirements. Check component obsolescence status as this series may be discontinued. Ensure voltage and temperature ratings align with target application environment specifications before procurement.

Memory IC Selection Notes

Select based on required parallel interface speed and non-volatile storage needs. Consider package size constraints for 56-TSOP footprint. Evaluate operating voltage compatibility with system power rails. Assess thermal performance requirements against specified ambient temperature limits.

Memory IC Part Context

This component belongs to Micron's StrataFlash embedded flash memory family. It represents a 65 nm single bit per cell technology node. The J3 series designation indicates specific feature sets and operational characteristics within the broader product line.

Memory IC Replacement Considerations

JS28F128J3D75A is a documented equivalent part number offering identical electrical specifications and pinout compatibility. Verify package marking differences when substituting.