TGF2023-2-02

Overview

The Qorvo TGF2023-2-02 is a discrete Gallium Nitride on Silicon Carbide (GaN-on-SiC) High Electron Mobility Transistor (HEMT). Designed for high-efficiency radio frequency applications, it operates across a DC to 18 GHz frequency range. The device delivers a nominal saturated output power of 40.1 dBm at 3 GHz with a power gain of 21 dB. It achieves a maximum Power Added Efficiency (PAE) of 73.3%. Electrical biasing requires a drain voltage between 12 V and 32 V, with a quiescent drain current ranging from 50 mA to 250 mA. The component is supplied as a bare die with physical dimensions of 0.82 mm x 0.92 mm x 0.10 mm.

Feature Summary

• Utilizes GaN-on-SiC technology for robust performance in wideband RF environments
• Provides high power added efficiency suitable for energy-constrained systems
• Supports broad frequency coverage from DC up to 18 GHz

Applications

• Satellite communication transmitters
• Electronic warfare systems
• Military radar amplifiers

Procurement Notes

Verify the specific ordering suffix against official Qorvo documentation to confirm exact binning or testing criteria. Confirm that the procurement channel sources genuine components directly from authorized distributors or the manufacturer to ensure authenticity. Check for RoHS compliance status in the latest datasheet revision before finalizing supply chain agreements.

Selection Notes

Select this component when designing circuits requiring high linearity and efficiency across ultra-wide bandwidths. Ensure the application can accommodate the specified drain voltage range of 12 V to 32 V. Verify that the system architecture supports bare die mounting techniques given the lack of a standard package. Evaluate thermal management requirements based on the 40.1 dBm output capability.

Part Context

This part belongs to the TGF2023 series of discrete GaN HEMTs from Qorvo. These devices are engineered for mission-critical aerospace and defense applications. The series emphasizes high reliability and performance in harsh electromagnetic environments, serving as core components in advanced signal generation and amplification modules.

Replacement Considerations

Consult official Qorvo substitution guides for verified equivalents. Generic cross-references may not match the specific GaN-on-SiC material properties or electrical tolerances required for DC-18 GHz operation.