TGF2023-2-10

Overview

The Qorvo TGF2023-2-10 is a discrete Gallium Nitride on Silicon Carbide High Electron Mobility Transistor designed for high-power radio frequency applications. It operates across a frequency range from DC to 14 GHz, with specific characterization extending up to 18 GHz in certain contexts. The device delivers an output power of 50 W at a drain voltage of 32 V. Key performance metrics include a Power Added Efficiency (PAE) of 69.5% and a gain of 19 dB. The component utilizes the QGaN25 production process and is supplied as a bare die.

Feature Summary

• Utilizes Qorvo's proven QGaN25 production technology for reliable high-power performance.
• Designed as a discrete HEMT structure optimized for broadband RF amplification.
• Capable of operation from DC frequencies up to 14 GHz with high efficiency.

Applications

• Broadband power amplifier design
• Military radar systems
• Electronic warfare equipment

Procurement Notes

Verify the specific ordering suffix and die configuration when sourcing. Confirm that the received component matches the QGaN25 process specifications. Ensure handling procedures account for the discrete die format. Cross-reference the datasheet revision to confirm electrical parameters align with current design requirements before integration into final products.

Selection Notes

Select this component for designs requiring high linearity and efficiency in wideband applications. The 50 W output capability suits demanding RF front-end architectures. Consider the thermal management requirements associated with GaN on SiC devices. Evaluate the need for discrete die mounting versus packaged alternatives based on system size constraints.

Part Context

This part belongs to Qorvo's portfolio of wireless and radio frequency semiconductors. It falls under the category of RF transistors and specifically GaN FETs. The product line supports high-performance communication and defense systems requiring robust signal generation capabilities.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Engineers should consult official Qorvo resources for direct replacements or pin-compatible alternatives if redesign is necessary.