TGF2023-2-20

Overview

The Qorvo TGF2023-2-20 is a discrete Gallium Nitride on Silicon Carbide High Electron Mobility Transistor (GaN HEMT) designed for high-power RF applications. Operating from DC to 14 GHz, this component utilizes the QGaN25 production process. It delivers a saturated output power of 50.5 dBm with a typical Power Added Efficiency (PAE) of 70.5% and a gain of 19 dB. The device features a 20 mm die size and supports a duty cycle of 0.1, ensuring robust performance in demanding signal generation environments.

Feature Summary

• Discrete GaN on SiC HEMT technology utilizing the QGaN25 production process
• Wideband operation capability spanning from DC to 14 GHz
• High saturated output power delivery at 50.5 dBm
• Superior efficiency characteristics with typical PAE of 70.5%

Applications

• High-power RF signal generation systems
• Military electronic warfare platforms
• Test and measurement equipment requiring wideband high-power sources

Procurement Notes

Verify the specific datasheet version and manufacturing lot details upon procurement. Ensure that handling procedures comply with electrostatic discharge (ESD) protocols appropriate for delicate semiconductor components. Confirm that the received units match the exact part number designation to avoid integration errors in high-frequency circuit designs.

Selection Notes

Select this component when designing circuits requiring high linearity and substantial power output across a broad frequency range. The 20 mm die format necessitates specific thermal management solutions and matching network designs. Evaluate the 0.1 duty cycle constraint to ensure the application does not exceed thermal limits during continuous operation phases.

Part Context

This device belongs to Qorvo's portfolio of discrete GaN power transistors engineered for defense and aerospace sectors. It represents an evolution in high-electron-mobility transistor technology, offering improved power density compared to earlier generations. The component serves as a critical active element in power amplifier stages where reliability and spectral purity are paramount.

Replacement Considerations

No public confirmed substitute part numbers are available.