TGF2819-FL

Overview

The Qorvo TGF2819-FL is a Gallium Nitride (GaN) field-effect transistor designed for high-power RF applications. It operates from DC to 3.5 GHz with a drain-source breakdown voltage of 32 V and a continuous drain current of 7.32 A. The device delivers a Power Added Efficiency (PAE) of 58% at 3.3 GHz. Key electrical parameters include a maximum power dissipation of 86 W and an operating temperature range from -40°C to +85°C. It utilizes an NI-360 screw-mount package configuration.

Feature Summary

• Utilizes GaN technology for enhanced performance in defense and aerospace systems
• Designed for high-efficiency power amplification in radar and electronic warfare applications
• Features robust thermal management capabilities suitable for mission-critical environments

Applications

• Advanced radar systems
• Space communication infrastructure
• Electronic warfare (EW) platforms

Procurement Notes

Verify component authenticity through authorized Qorvo distributors or certified suppliers. Confirm the specific suffix matches the required NI-360 package and screw-mount configuration. Check RoHS compliance status against project requirements. Ensure storage conditions adhere to moisture sensitivity levels specified in the official datasheet to prevent degradation prior to assembly.

Selection Notes

Select this component when designing power amplifiers requiring operation up to 3.5 GHz with high efficiency. Consider the 32 V breakdown voltage and 86 W power dissipation limits during thermal design. Evaluate the NI-360 package constraints for mechanical integration. Compare against other Qorvo GaN FETs if different frequency ranges or voltage ratings are needed for the specific system architecture.

Part Context

This part belongs to Qorvo's portfolio of GaN field-effect transistors, supporting their focus on defense and aerospace innovations. Qorvo products are integral to advanced radar, space, and electronic warfare systems. The company collaborates with the US Department of Defense and DARPA to develop components that offer significant Size, Weight, and Power (SWaP) advantages for global mission-critical needs.

Replacement Considerations

Consult official Qorvo documentation for qualified substitute part numbers. Verify pinout compatibility and electrical parameter equivalence before substitution. Generic replacements may not meet the specific reliability standards required for defense applications.