TGF2929-FL

Overview

The Qorvo TGF2929-FL is a discrete Gallium Nitride on Silicon Carbide (GaN) High Electron Mobility Transistor (HEMT). It operates from DC to 3.5 GHz with a 28V supply rail. The device delivers 107 W output power at P3dB compression point and provides 14 dB gain. Key electrical parameters include a Power Added Efficiency (PAE) of 50% and an input pre-match for wideband integration.

Feature Summary

• Discrete GaN on SiC HEMT technology
• Wideband operation from DC to 3.5 GHz
• Input pre-matched design
• Advanced field plate techniques

Applications

• Broadband RF power amplification
• Military electronic warfare systems
• Test and measurement equipment
• Base station infrastructure

Procurement Notes

Verify the specific datasheet version and manufacturer lot codes upon order confirmation. Ensure that the receiving facility handles GaN components according to electrostatic discharge (ESD) protection guidelines. Confirm that the 28V supply requirements align with the system design specifications before finalizing procurement.

Selection Notes

Select this component when high linearity and broad bandwidth are required up to 3.5 GHz. The input pre-match simplifies circuit design compared to unmatched devices. Consider thermal management requirements due to the 107 W power output capability and the need for a stable 28V bias supply in the application environment.

Part Context

This part belongs to Qorvo's portfolio of discrete GaN RF power transistors. It utilizes Silicon Carbide substrates for superior thermal conductivity and high-power handling. The TGF2929-FL is designed for demanding RF applications requiring high efficiency and wideband performance without complex matching networks.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Direct replacement requires verification of pinout compatibility, thermal characteristics, and electrical performance against the original design specifications.