TGF2933

Overview

The Qorvo TGF2933 is a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for high-power radio frequency applications. It operates from DC to 18 GHz and delivers a saturated output power of 40.1 dBm at 3 GHz. The device achieves a maximum Power Added Efficiency (PAE) of 73.3% with a nominal power gain of 21 dB. It utilizes a GaN-on-SiC technology platform and is supplied as a die in a gel pack, supporting bias voltages between 12 V and 32 V.

Feature Summary

• High-efficiency GaN-on-SiC HEMT technology optimized for RF power amplification
• Wideband operation capability spanning from DC up to 18 GHz
• Integrated design suitable for high-output power density requirements

Applications

• Wireless infrastructure base station power amplifiers
• Satellite communication transmitter modules
• Electronic warfare and military radar systems

Procurement Notes

Verify the specific ordering suffix and tape-and-reel specifications directly with Qorvo or authorized distributors before procurement. Confirm that the gel pack handling procedures align with your facility's electrostatic discharge protection standards. Ensure the component meets all relevant environmental compliance requirements for your target market.

Selection Notes

Select the TGF2933 when designing circuits requiring high linearity and efficiency across a broad microwave frequency range. Evaluate thermal management solutions carefully due to the high power dissipation characteristics inherent to GaN devices. Compare performance metrics against alternative GaN suppliers if system-level integration constraints require specific package dimensions or pin configurations.

Part Context

This component belongs to Qorvo's TGF2023 series of discrete GaN transistors. It shares similar technological foundations with other members of this family, such as the TGF2023-2-02, offering comparable RF performance characteristics while providing flexibility for custom amplifier designs by engineers integrating bare dies into their substrates.

Replacement Considerations

Direct replacements are limited due to the specific die configuration. Consider evaluating the TGF2023-2-02 for equivalent performance profiles. Verify compatibility regarding footprint, bonding pad arrangements, and electrical parameters before substituting any alternative components.