TGF2954

TGF2954

$66.93
  • Description:DC-12GHZ,27W DISCRETE PWR GAN/SI
  • Series:-

SKU:a31e6f207a41 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:DC-12GHZ,27W DISCRETE PWR GAN/SI
  • Series:-
  • Mfr:Qorvo
  • Package:Tray
  • Technology:HEMT
  • Frequency:12GHz
  • Gain:8.4dB
  • Voltage - Test:32 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:100 mA
  • Power - Output:27W
  • Voltage - Rated:100 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:Die
  • Supplier Device Package:Die
  • Configuration:N-Channel

Download product information

TGF2954

Overview

The Qorvo TGF2954 is a discrete Gallium-Nitride on Silicon Carbide (GaN-on-SiC) High-Electron Mobility Transistor (HEMT). It operates from DC to 12 GHz. The device typically provides 44.5 dBm of saturated output power with a power gain of 19.5 dB at 3 GHz. Maximum power-added efficiency reaches 71.5%. Key electrical parameters include a continuous drain current of 1.7 A and a power dissipation rating of 34.5 W. The component supports an operating temperature range from -65°C to +150°C.

Feature Summary

  • Utilizes GaN-on-SiC technology for high-power density and thermal stability
  • Delivers high saturated output power across a wide frequency band up to 12 GHz
  • Achieves maximum power-added efficiency of 71.5% for improved energy utilization

Applications

  • Satellite communication systems
  • Point-to-point microwave links
  • High-efficiency RF power amplification stages

Procurement Notes

Verify the specific ordering suffix and package variant against the official Qorvo datasheet before purchase. Confirm that the received component matches the specified GaN-on-SiC construction and pinout configuration. Ensure storage and handling procedures comply with electrostatic discharge (ESD) protection standards required for sensitive semiconductor devices. Cross-reference the manufacturer part number with authorized distributor catalogs to avoid counterfeit components.

Selection Notes

Select the TGF2954 when applications require high linearity and efficiency in broadband RF environments. Consider its thermal management requirements due to significant power dissipation capabilities. Evaluate compatibility with existing biasing networks and impedance matching circuits designed for GaN HEMT architectures. Assess whether the 12 GHz upper frequency limit aligns with system bandwidth specifications.

Part Context

This component belongs to Qorvo's portfolio of discrete GaN-on-SiC HEMTs designed for demanding RF applications. It represents a mature technology node optimized for high power density. The device complements other Qorvo solutions by offering robust performance in satellite and terrestrial wireless infrastructure sectors where reliability and efficiency are critical.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult Qorvo technical support or authorized distributors for direct replacements or pin-compatible alternatives.

TGF2954TGF2954
$66.93
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