TGF2965-SM

TGF2965-SM

$663.00
  • Description:.03-3GHZ,5W,32V,50OHM GAN RF I/P
  • Series:-

SKU:d075f600dd7b Category: Brand:

  
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Product Detailed Parameters

  • Description:.03-3GHZ,5W,32V,50OHM GAN RF I/P
  • Series:-
  • Mfr:Qorvo
  • Package:Tray
  • Technology:HEMT
  • Frequency:30MHz ~ 3GHz
  • Gain:18dB
  • Voltage - Test:32 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:25 mA
  • Power - Output:5W
  • Voltage - Rated:100 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:16-VFQFN Exposed Pad
  • Supplier Device Package:16-QFN (3x3)
  • Configuration:N-Channel

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TGF2965-SM

Overview

The Qorvo TGF2965-SM is a discrete Gallium-Nitride on Silicon Carbide High-Electron-Mobility Transistor designed for RF applications. It operates within a frequency range of 0.03 to 3.0 GHz and features an integrated input matching network for 50-ohm impedance. The device delivers an output power (P3dB) of 6.0 W and requires a supply voltage of 32 V. Key performance metrics include a gain of 18 dB at 2 GHz, making it suitable for broadband power amplification tasks.

Feature Summary

  • Discrete GaN HEMT technology on Silicon Carbide substrate
  • Integrated input matching network for simplified circuit design
  • Broadband operation covering 30 MHz to 3 GHz
  • High power output capability with 50-ohm input match

Applications

  • Broadband power amplifier modules
  • Test and measurement equipment
  • Military communication systems
  • Electronic warfare applications

Procurement Notes

Verify the specific suffix designation to ensure the correct package variant and lead-free status are obtained. Confirm that the 32 V supply requirement aligns with the system power architecture. Check for available evaluation boards if initial prototyping support is required. Ensure thermal management solutions are compatible with the discrete component form factor.

Selection Notes

Select this component when a wide bandwidth from 30 MHz to 3 GHz is required alongside high power output. The integrated input matching simplifies design complexity compared to unmatched devices. Consider the 32 V operating voltage when designing bias circuits. Evaluate thermal dissipation needs based on the 6 W output power specification in the target application environment.

Part Context

This part belongs to Qorvo's portfolio of Gallium-Nitride radio frequency components. It utilizes advanced semiconductor materials to achieve high efficiency and power density. The device represents a discrete solution rather than an integrated module, offering flexibility for custom amplifier designs across various RF frequencies.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Engineers should consult official Qorvo resources or authorized distributors for current equivalent recommendations.

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