TGF2977-SM

Overview

The Qorvo TGF2977-SM is a wideband, unmatched discrete Gallium Nitride on Silicon Carbide (GaN) High Electron Mobility Transistor (HEMT). It operates from DC to 12 GHz with a 32 V supply rail. The device delivers 5 W of output power at the 1 dB compression point (P1dB) and 6 W at the 3 dB compression point (P3dB). It features a typical gain of 13 dB and a Power Added Efficiency (PAE) of 50% in the 8-12 GHz range. The component is housed in an industry-standard 3 x 3 mm package.

Feature Summary

• Discrete GaN on SiC HEMT technology for high-power RF applications
• Wideband operation spanning DC to 12 GHz
• Unmatched design suitable for flexible circuit integration
• Industry-standard compact 3 x 3 mm package footprint

Applications

• Military radar systems
• Commercial communication infrastructure
• Electronic warfare equipment
• Test and measurement instrumentation

Procurement Notes

Verify the specific ordering suffix against official Qorvo documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the required voltage and thermal management solutions align with the 32 V supply and power dissipation requirements. Ensure compatibility with the 3 x 3 mm package dimensions during PCB layout. Cross-reference the part number with authorized distributors to validate authenticity and current production status.

Selection Notes

Select this component when a wideband, high-power solution is required across the DC to 12 GHz spectrum. The unmatched nature of the device allows designers to implement custom matching networks tailored to specific frequency bands or impedance requirements. Consider the 32 V operating voltage and thermal performance characteristics when designing the biasing and heat dissipation structures for the application.

Part Context

The TGF2977-SM belongs to Qorvo's portfolio of GaN RF transistors built on the proven TQGaN25 process. This series targets high-performance applications requiring significant power density and broad bandwidth. The device complements matched amplifier modules by providing a discrete active element for custom RF front-end designs.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Evaluate alternative GaN devices based on similar power levels, frequency ranges, and package footprints if direct substitution is necessary.

FAQ

Is the TGF2977-SM a matched or unmatched device?

The TGF2977-SM is an unmatched discrete transistor, requiring external matching networks for integration into circuits.

What is the maximum operating frequency of the TGF2977-SM?

The device operates up to a maximum frequency of 12 GHz.