TGF3020-SM

Overview

The TGF3020-SM is an RF FET, specifically an N-channel MOSFET HEMT manufactured by Qorvo. It operates with a drain-source voltage of 40 V and provides a gain of 13 dB. The device requires a gate current of 25 mA for operation. It is housed in a 16-VFQFN package featuring two exposed pads. This component is designed for high-frequency radio frequency applications requiring robust power handling and linearity.

Feature Summary

• Utilizes N-channel MOSFET HEMT technology for enhanced RF performance
• Integrated design supports high gain operations at 13 dB
• Robust voltage handling capability up to 40 V
• Optimized for compact integration via 16-VFQFN surface mount packaging

Applications

• Radio frequency power amplification stages
• Wireless communication infrastructure systems
• Defense and aerospace radar transmitters

Procurement Notes

Verify the specific suffix designation against official Qorvo documentation to ensure compatibility with required tape-and-reel or cut-tape configurations. Confirm that the 16-VFQFN package dimensions align with target PCB footprint specifications prior to procurement. Ensure supply chain sources provide authentic components with traceable manufacturing data.

Selection Notes

Select this component when designing circuits requiring an N-channel HEMT structure with moderate voltage tolerance. The 40 V rating suits applications exceeding lower-voltage alternatives while maintaining manageable bias requirements. Evaluate thermal management needs based on the exposed pad design to ensure adequate heat dissipation during continuous RF operation.

Part Context

This part belongs to Qorvo's portfolio of RF discrete semiconductors, supporting advanced defense and communication systems. It complements other high-performance active devices within the manufacturer's lineup, focusing on reliability and signal integrity for mission-critical electronic warfare and radar platforms.

Replacement Considerations

Consult official Qorvo substitution guides for verified equivalents. Generic cross-references may not match the specific HEMT characteristics or pinout configuration.