TGF3021-SM

$663.00

Description：0.03-4.0 GHZ, 30W, 32V GAN RF TR
Series：-

SKU:f999a7d76680 Category: RF FETs, MOSFETs Brand: Qorvo

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Product introduction

Product Detailed Parameters

Description：0.03-4.0 GHZ, 30W, 32V GAN RF TR
Series：-
Mfr：Qorvo
Package：Tray
Technology：HEMT
Frequency：30MHz ~ 4GHz
Gain：19.3dB
Voltage - Test：32 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：65 mA
Power - Output：30W
Voltage - Rated：100 V
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：20-VFQFN Exposed Pad
Supplier Device Package：20-QFN (3x4)
Configuration：N-Channel

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TGF3021-SM

Overview

The Qorvo TGF3021-SM is a discrete Gallium Nitride on Silicon Carbide (GaN) High Electron Mobility Transistor (HEMT). It delivers 30 W of output power at the 3 dB compression point. The device operates across a wide frequency range from DC to 4 GHz. It utilizes a 32V supply rail for functionality. The component is built using Qorvo's TQGaN25 technology platform. This configuration supports broadband unmatched applications requiring high power density and efficiency within the specified operational bandwidth.

Feature Summary

Discrete GaN on SiC HEMT construction
Wideband operation from DC to 4 GHz
High power output capability at 30 W
Compatible with standard 32V supply rails

Applications

Broadband radar systems
Electronic warfare equipment
Test and measurement instrumentation

Procurement Notes

Verify the specific datasheet revision and official manufacturer documentation before integration. Confirm that the application circuit design aligns with the thermal and electrical requirements of the 32V supply rail. Ensure compatibility with the intended PCB footprint and matching network specifications provided in the official technical data.

Selection Notes

Select this component for designs requiring high power density in a discrete form factor. The wideband nature supports frequencies from DC up to 4 GHz. Consider the thermal management capabilities required for 30 W output. Evaluate the suitability of the GaN on SiC technology for the specific efficiency targets of the target application environment.

Part Context

This part belongs to Qorvo's portfolio of RF power transistors utilizing advanced GaN technology. It represents a solution for high-power, broadband applications where traditional silicon devices may lack performance. The TGF3021-SM is distinct from integrated switches or PMICs offered by the same manufacturer, focusing specifically on discrete amplification tasks.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material. Consult official Qorvo resources for potential alternatives.