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The TIG065E8-TL-H is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a single configuration with a collector-emitter voltage rating of 400V and a continuous collector current capacity of 150A. The device utilizes the ECH8 package, which is designed for surface-mount applications. Key electrical characteristics include a maximum collector-emitter saturation voltage of 4.2V at specified conditions and a gate-emitter leakage current of 10 µA. The component supports a junction operating temperature up to 150°C.
Verify availability status carefully as this part number may be obsolete or discontinued in certain regions. Confirm RoHS compliance and REACH status through official onsemi documentation before integration. Check for tariff implications if shipping to specific countries. Ensure the supplier provides valid traceability documents matching the original manufacturer specifications.
Select this component for designs requiring 400V blocking capability and 150A continuous current handling in a surface-mount form factor. Evaluate thermal management requirements given the 150°C junction temperature limit. Compare saturation voltage performance against alternative packages if space constraints allow. Ensure gate drive circuitry matches the standard input type specifications.
This IGBT belongs to onsemi's discrete power transistor lineup, specifically targeting applications needing robust switching performance in compact layouts. The ECH8 package represents a specialized surface-mount solution distinct from traditional through-hole variants. It complements other single IGBTs in the portfolio designed for medium-voltage power electronics.
Public sources indicate this product is no longer manufactured. Verify if equivalent series parts are available directly from onsemi. Cross-reference pinout and thermal pad dimensions when considering alternative suppliers. Ensure substitute components match the 400V/150A ratings and ECH8 footprint if physical compatibility is required.