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The TIS74 is an N-channel JFET in a TO-92 package designed for low-level analog switching, sample-and-hold circuits, and chopper-stabilized amplifiers. It features a gate-source cutoff voltage range of -6.0 V to -10 V and a zero-gate voltage drain current of 20 mA to 100 mA. The device operates with a maximum drain-gate voltage of 30 V and a gate-source breakdown voltage of -30 V. Thermal dissipation reaches 350 mW at 25°C ambient temperature.
Verify the manufacturer origin, as the datasheet indicates Fairchild Semiconductor while the brand is onsemi. Confirm the specific suffix matches the required electrical parameters, particularly the gate-source cutoff voltage and drain current ranges. Ensure the component status is checked against current production availability.
Select the TIS74 when a JFET with a higher gate-source cutoff voltage (-6.0 V to -10 V) and lower zero-gate voltage drain current (20 mA to 100 mA) is required compared to the TIS73 variant. Consider the TO-92 package constraints for thermal management and physical space in the target circuit design.
The TIS74 is part of the TIS73/TIS74 series of N-channel general-purpose JFETs manufactured by Fairchild Semiconductor. These devices are sourced from process 54 and are intended for use in precision analog signal processing applications where low leakage and stable cutoff characteristics are critical.
The TIS73 is a pin-compatible alternative within the same series but offers different electrical specifications, specifically a wider gate-source cutoff voltage range (-4.0 V to -10 V) and higher zero-gate voltage drain current (50 mA to 100 mA). Verify if these parameter differences meet the application requirements before substitution.
The typical turn-off time for the TIS74 is 50 ns under test conditions of VGS(off) = -10V, VGS(on) = 0, ID = 20mA, and VDS = 10V.
The maximum total device dissipation is 350 mW at an ambient temperature of 25°C, with a derating factor of 2.8 mW/°C above this temperature.
Both the TIS73 and TIS74 share the same typical input capacitance value of 18 pF, measured at VDS = 0, VGS = -10V, and f = 1.0MHz.