TK39N60W,S1VF

Single FETs, MOSFETs Overview

The TK39N60W,S1VF is a single N-channel enhancement-mode power MOSFET manufactured by Toshiba Semiconductor and Storage. It utilizes silicon technology and belongs to the DTMOSIV series, housed in a TO-247-3 through-hole package. Key electrical parameters include a drain-source breakdown voltage (Vds) of 600 V and a continuous drain current (Id) of 38.8 A at 25°C. The device features a maximum on-resistance (Rds(on)) of 55 mΩ at Vgs = 10 V. Additional specifications list a gate-source voltage range of ±30 V, a typical gate charge (Qg) of 110 nC, and a power dissipation rating of 270 W. The component operates within a temperature range of -55°C to +150°C junction temperature.

Single FETs, MOSFETs Feature Summary

• Employs DTMOSIV superjunction technology for optimized switching performance.
• Features an internal body diode with specified forward voltage characteristics.
• Designed for high-voltage applications requiring robust thermal stability.

Single FETs, MOSFETs Applications

• High-frequency switching power supplies
• Industrial motor drive circuits
• Uninterruptible power supply (UPS) systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix S1VF against the manufacturer's official datasheet to confirm pinout compatibility and exact electrical tolerances. Ensure that the ordering documentation matches the TO-247-3 package style. Cross-reference the part number with Toshiba Semiconductor and Storage catalogs to validate RoHS compliance status and availability of updated revision information before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring a 600 V rating with moderate current handling capabilities around 38 A. The low on-resistance value supports efficient conduction in power conversion stages. Consider the thermal management requirements associated with the 270 W dissipation rating and the physical constraints of the TO-247-3 leaded package for proper heat sinking integration.

Single FETs, MOSFETs Part Context

This device is part of the broader TK39N60W family from Toshiba, which includes variants with different on-resistance values such as the TK39N60W5,S1VF offering 62 mΩ. The family shares common packaging and basic voltage ratings but differs in specific conductive losses. This specific model represents a balance between conduction efficiency and switching speed suitable for general-purpose industrial power electronics.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes within the same series include the TK39N60W5,S1VF, which maintains identical packaging and voltage ratings but specifies a higher on-resistance of 62 mΩ. Designers must verify that the increased resistance does not exceed thermal limits in the target application. Other family members like TK62N60W offer higher current capacity but require evaluation of gate drive compatibility.