TPC8227-H,LQ

Description：MOSFET 2N-CH 40V 5.1A 8SOP
Series：U-MOSVI-H

SKU:dd4dedad8d18 Category: FET, MOSFET Arrays Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 40V 5.1A 8SOP
Series：U-MOSVI-H
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：5.1A
Rds On (Max) @ Id, Vgs：33mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id：2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs：10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：640pF @ 10V
Power - Max：1.5W (Ta)
Operating Temperature：150°C
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOP
Grade：-
Qualification：-

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TPC8227-H,LQ

Overview

The TPC8227-H is a dual N-channel MOSFET from Toshiba Semiconductor and Storage, utilizing U-MOS-H technology. It features a SOP-8 package with pins 1 and 3 as sources, pins 2 and 4 as gates, and pins 5 through 8 as drains. The device supports a drain-source voltage of 40 V and a continuous drain current of 5.1 A. Key electrical parameters include a typical on-resistance of 22 mΩ at VGS = 10 V and a gate switch charge of 2.4 nC. Operating temperatures range from -55°C to 150°C.

Feature Summary

Dual configuration in a compact SOP-8 package
High-speed switching capability with low gate charge
Low drain-source on-resistance for efficient power handling
Enhancement mode operation with defined threshold voltage

Applications

DC-DC Converters
CCFL Inverters

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm environmental compliance status, such as RoHS compatibility. Confirm the package type matches the required SOP-8 footprint and pinout configuration before finalizing procurement orders.

Selection Notes

Select this component for applications requiring dual N-channel switching within a small form factor. Ensure the design accounts for the 40 V drain-source voltage limit and the 5.1 A continuous current rating. Consider thermal resistance values when designing heat dissipation strategies for single or dual operation modes.

Part Context

This part belongs to the TPC8227 series of silicon N-channel MOSFETs manufactured by Toshiba Semiconductor and Storage. It is designed for general-purpose switching applications where space efficiency and switching speed are critical factors in the circuit design.