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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V/12V 0.1A PS-8
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V, 12V
- Current - Continuous Drain (Id) @ 25°C：100mA, 5.5A
- Rds On (Max) @ Id, Vgs：3Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id：1.1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：9.3pF @ 3V
- Power - Max：1W
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：PS-8 (2.9x2.4)
- Grade：-
- Qualification：-
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Overview
The TPCP8401 is a multi-chip discrete device integrating a P-channel MOS FET for main switching and an N-channel MOS FET for drive, utilizing U-MOS III technology. The P-channel section features a drain-source voltage of -12 V, continuous drain current of -5.5 A, and typical on-resistance of 31 mΩ. The N-channel section provides a drain-source voltage of 20 V with a typical on-resistance of 1.5 Ω. Packaged in the small 2-3V1G format, it supports switching regulator and load switch applications.
Feature Summary
- Multi-chip discrete configuration combining P-channel main switch and N-channel driver
- Low drain-source ON resistance for efficient power handling
- High forward transfer admittance for effective control
- Small footprint enabled by thin package design
Applications
- Switching Regulator Applications
- Load Switch Applications
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and specific ordering suffixes such as TE85L against official Toshiba Semiconductor documentation to ensure correct variant selection.
Selection Notes
Select this component for designs requiring integrated high-side switching with built-in low-side drive capability. Ensure gate drive voltages align with the specified threshold ranges for both channel types. Verify thermal management requirements against the provided junction-to-ambient resistance values.
Part Context
This part belongs to the Toshiba Field Effect Transistor series based on Silicon P and N Channel MOS Type technology. It represents a discrete solution designed to replace separate discrete components in compact power management circuits.
Replacement Considerations
Consult Toshiba Semiconductor for verified equivalent parts within the same U-MOS family. Cross-reference pinouts and electrical ratings carefully when considering alternative manufacturers.
FAQ
What is the maximum drain-source voltage for the P-channel section?
The maximum drain-source voltage (VDSS) for the P-channel section is -12 V.
What is the typical gate threshold voltage for the P-channel MOSFET?
The typical gate threshold voltage (Vth) for the P-channel section is between -0.5 V and -1.2 V under standard test conditions.
Does the device include avalanche energy ratings?
Yes, the datasheet specifies single pulse avalanche energy (EAS) of 5.3 mJ and repetitive avalanche energy (EAR) of 0.22 mJ for the P-channel section.
