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Product Detailed Parameters
- Description：MOSFET 2P-CH 15V 1.17A 8SOIC
- Series：-
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：15V
- Current - Continuous Drain (Id) @ 25°C：1.17A
- Rds On (Max) @ Id, Vgs：180mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5.45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：840mW
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The TPS1120DR is a dual P-channel enhancement-mode MOSFET manufactured by Texas Instruments. It features an SOIC-8 surface-mount package and operates within a temperature range of -40°C to +125°C. Key electrical parameters include a drain-source breakdown voltage (Vds) of 15 V, a continuous drain current (Id) of 1.17 A, and a gate-source voltage (Vgs) rating of -15 V. The device exhibits a maximum on-resistance (Rds(on)) of 180 mΩ at specified conditions, with a gate threshold voltage (Vgs(th)) of 1.5 V and a total gate charge (Qg) of 5.45 nC. Power dissipation is rated at 840 mW.
Feature Summary
- Dual channel configuration for integrated power switching applications
- P-channel technology optimized for low-side or high-side load control
- Enhancement mode operation ensuring defined off-state without gate bias
Applications
- General-purpose load switching in portable electronics
- Power distribution management in battery-operated devices
- Protection circuits requiring dual independent channel control
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm package type and tape-and-reel specifications. Ensure that the component meets RoHS compliance requirements relevant to your target market regulations before finalizing procurement orders.
Selection Notes
Select this component when a dual P-channel solution is required within a compact SOIC-8 footprint. Evaluate the 180 mΩ on-resistance against thermal constraints to ensure the 840 mW power dissipation limit is not exceeded during continuous operation under expected load currents.
Part Context
This part belongs to the TPS1120 family of dual MOSFETs designed for efficient power management. It serves as a discrete alternative to complex power switches, offering simplified design integration for systems requiring isolated control of two separate loads using a single package.
Replacement Considerations
Consult the official cross-reference list for verified equivalents. Ensure substitute parts match the SOIC-8 pinout, 15 V voltage rating, and P-channel polarity to maintain circuit compatibility without redesign.
