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TPW2R508NH,L1Q is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is PB-F POWER MOSFET TRANSISTOR DOS. Review the specifications below when checking this part for your BOM.
The TPW2R508NH,L1Q is an N-channel Power MOSFET from Toshiba, designed for high-efficiency switching applications. It features a Drain-Source Voltage (Vds) of 75 V and a Continuous Drain Current (Id) of 170 A. The device exhibits a low Drain-Source On-State Resistance (Rds(on)) of 2 mΩ at Vgs = 10 V. Thermal performance includes a power dissipation of 800 mW at ambient temperature and 142 W at case temperature. It is housed in an 8-DSOP Advance surface-mount package.
Verify the specific ordering code TPW2R508NH,L1Q against the manufacturer's official datasheet to ensure compatibility with your design requirements. Confirm that the 8-DSOP Advance package dimensions match your PCB footprint. Check for RoHS compliance status as indicated in the product documentation before finalizing procurement.
Select this component when a 75 V breakdown voltage and 170 A current rating are required. The low Rds(on) value makes it suitable for applications prioritizing thermal efficiency. Ensure the operating environment supports the specified power dissipation limits in both ambient and case conditions.
This part belongs to Toshiba's U-MOSⅧ-H series, which focuses on high-efficiency power switching. The TPW2R508NH variant is specifically engineered for 12 V to 300 V MOSFET applications, offering improved performance over previous generations in terms of on-resistance and switching characteristics.
Consult Toshiba's official substitution guide for verified equivalents. Cross-referencing with other manufacturers requires careful comparison of Vds, Id, Rds(on), and package dimensions to ensure functional compatibility.
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