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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 10A 8PDFNU
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta), 50A (Tc)
- Rds On (Max) @ Id, Vgs：11mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1354pF @ 20V
- Power - Max：2.5W (Ta), 58W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount, Wettable Flank
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-PDFNU (5x6)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The TQM110NB04DCR RLG is an automotive-grade dual N-channel MOSFET from Taiwan Semiconductor, qualified to AEC-Q101 standards. It features a PDFN56U-6 package with wettable flanks and supports a maximum junction temperature of 175°C. Key electrical parameters include a drain-source voltage (VDS) of 40 V, a continuous drain current (ID) of 10 A at 25°C ambient or 50 A at 25°C case temperature, and a maximum on-resistance (RDS(on)) of 11 mΩ at VGS = 10 V. The device exhibits a gate charge (Qg) of 26 nC, a threshold voltage (VGS(th)) up to 3.8 V, and a total power dissipation of 2.5 W at 25°C ambient.
Feature Summary
- AEC-Q101 qualified for automotive reliability requirements
- Wettable flank package design facilitates automated optical inspection
- Supports high-temperature operation up to 175°C junction temperature
- Validated for 100% unclamped inductive switching (UIS) performance
Applications
- 12V Automotive Systems
- Solenoid and Motor Control
- Automotive Transmission Control
- DC-DC Converters
Procurement Notes
Verify the specific ordering code suffix against official documentation to confirm packaging details. Confirm that the component meets the required AEC-Q101 qualification level for the target application environment. Ensure thermal management designs account for the specified junction-to-case resistance values during operation.
Selection Notes
Select this component when a dual N-channel configuration is required within a compact surface-mount footprint. Consider the 175°C operating limit for high-thermal environments. Evaluate the 11 mΩ on-resistance against conduction loss requirements at the intended drive voltage. Verify compatibility with the PDFN56U-6 land pattern for proper soldering and inspection.
Part Context
This part belongs to the TQM series of automotive dual N-channel MOSFETs manufactured by Taiwan Semiconductor Corporation. The series is designed specifically for robust automotive applications requiring high reliability and thermal performance. The TQM110NB04DCR variant utilizes the PDFN56U Dual package to provide enhanced thermal dissipation and reliable interconnects.
Replacement Considerations
Direct substitutes must match the 40V rating, dual N-channel topology, and PDFN56U-6 package dimensions. Verify equivalent RDS(on), Qg, and thermal characteristics. Ensure any replacement also holds AEC-Q101 certification if used in automotive contexts.
