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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 12A 8PDFNU
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：12A (Ta), 51A (Tc)
- Rds On (Max) @ Id, Vgs：8.5mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1091pF @ 15V
- Power - Max：2W (Ta), 40W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-PDFNU (5x6)
- Grade：-
- Qualification：-
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Overview
The TSM085NB03DCR is a single N-channel Power MOSFET manufactured by Taiwan Semiconductor. It is designed for low-voltage, high-current applications requiring efficient power management. The device features a drain-source voltage rating of 30V and a continuous drain current capacity of 85A. It utilizes an advanced planar trench technology to achieve low on-resistance, enhancing switching efficiency and reducing conduction losses in DC-DC converter circuits.
Feature Summary
- Single N-channel configuration optimized for synchronous rectification
- Low gate charge characteristics supporting high-frequency switching operations
- Enhanced thermal performance through robust package design
Applications
- Point-of-load (POL) DC-DC converters
- Synchronous rectification in server and data center power supplies
- Automotive electronics power distribution modules
Procurement Notes
Verify the specific suffix 'CR' against official datasheets to confirm reel packaging specifications and tape-and-reel dimensions. Ensure compatibility with automated pick-and-place equipment requirements. Confirm RoHS compliance status and AEC-Q101 qualification if automotive grade certification is required for the target application environment.
Selection Notes
Select this component when designing systems requiring a 30V rail with high current handling capabilities up to 85A. Evaluate the total gate charge and threshold voltage parameters against the driving controller's output capability. Consider the thermal resistance values relative to the PCB copper area and cooling strategy to maintain junction temperature within safe operating limits during peak load conditions.
Part Context
This part belongs to the TSM085NB series of low-voltage MOSFETs from Taiwan Semiconductor. It shares similar electrical characteristics with other members of the family but may differ in packaging or specific testing criteria. The product falls under the PMIC - Power Management ICs subcategory as a discrete power switch component.
Replacement Considerations
Check for direct substitutes such as TSM085NB03CV or variants with identical pinouts and electrical ratings. Verify that any replacement maintains the same Rds(on) maximum limits and gate charge specifications to ensure circuit stability without redesign.
