TSM200N03DPQ33 RGG

$0.79

Description：MOSFET 2N-CH 30V 20A 8PDFN
Series：-

SKU:57e501750203 Category: FET, MOSFET Arrays Brand: Taiwan Semiconductor Corporation

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 20A 8PDFN
Series：-
Mfr：Taiwan Semiconductor Corporation
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：20A (Tc)
Rds On (Max) @ Id, Vgs：20mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：345pF @ 25V
Power - Max：20W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerWDFN
Supplier Device Package：8-PDFN (3x3)
Grade：-
Qualification：-

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TSM200N03DPQ33 RGG

Overview

The TSM200N03DPQ33 RGG is a dual N-channel MOSFET from Taiwan Semiconductor, rated for a drain-source voltage of 30 V. It features a maximum on-state resistance of 20 mΩ at VGS = 10V and 30 mΩ at VGS = 4.5V. The device supports a continuous drain current of 20 A at TC = 25°C and handles pulsed currents up to 80 A. Total gate charge is 4.1 nC. It utilizes a PDFN33 Dual package with a junction-to-case thermal resistance of 6.4 °C/W and operates within a temperature range of -55°C to +150°C.

Feature Summary

Dual N-Channel configuration
Fast switching capability
100% avalanche tested

Applications

Power Supply
Motor Control

Procurement Notes

Verify the specific ordering suffix 'RGG' against the manufacturer's datasheet to confirm packaging details, such as reel size and quantity per reel. Ensure compliance requirements like RoHS and halogen-free status match project specifications before finalizing procurement orders.

Selection Notes

Select this component for applications requiring low on-resistance and fast switching in compact surface-mount designs. Evaluate thermal management needs based on the specified junction-to-case resistance and ensure the operating voltage remains within the 30 V limit.

Part Context

This part belongs to the TSM200N03D series of dual N-channel power MOSFETs manufactured by Taiwan Semiconductor Corporation. It is designed for general-purpose switching applications where space efficiency and electrical performance are prioritized.

Replacement Considerations

Consult official substitution lists or cross-reference databases for verified equivalent parts. Confirm that any alternative component matches the PDFN33 Dual package dimensions and electrical ratings before implementation.